AUIRF2804S-7P International Rectifier, AUIRF2804S-7P Datasheet

AUIRF2804S-7P

Manufacturer Part Number

AUIRF2804S-7P

Description

MOSFET N-CH 40V 240A D2PAK-7

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF2804S-7P.pdf (13 pages)

Specifications of AUIRF2804S-7P

Input Capacitance (ciss) @ Vds

6930pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.6 mOhm @ 160A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

240A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

260nC @ 10V

Power - Max

330W

Mounting Type

Surface Mount

Package / Case

TO-263-7, D²Pak (6 leads + Tab), TO-263CB

Transistor Polarity

N Channel

Drain Source Voltage Vds

40V

On Resistance Rds(on)

1.5mohm

Rds(on) Test Voltage Vgs

10V

Operating Temperature Range

-55Â°C To +175Â°C

Transistor Case Style

D2-PAK

Rohs Compliant

Yes

Configuration

Single Quint Source

Resistance Drain-source Rds (on)

1.6 mOhms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

320 A

Power Dissipation

330 W

Mounting Style

SMD/SMT

Gate Charge Qg

170 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRF2804S-7P

Manufacturer:

Quantity:

12 500

Company:

H&T Electronics

Part Number:

AUIRF2804S-7P

Quantity:

2 900

Current page: 1 of 13
Download datasheet (287Kb)

HEXFET

*Qualification standards can be found at http://www.irf.com/

Features

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

Description

Specifically designed for Automotive applications, this

HEXFET

ing techniques to achieve extremely low on-resistance

per silicon area. Additional features of this design are

a 175°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating .

These features combine to make this design an ex-

tremely efficient and reliable device for use in Automo-

tive applications and a wide variety of other applica-

tions.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest process-

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

) is 25°C, unless otherwise specified.

AUTOMOTIVE GRADE

Parameter

@ 10V (Silicon Limited)

@ 10V (Package Limited)

Gate

AUIRF2804S-7P

HEXFET

See Fig.12a,12b,15,16

D (Silicon Limited)

D (Package Limited)

(BR)DSS

DS(on)

Typ.

0.50

–––

-55 to + 175

Drain

Max.

1360

1050

300

320

230

240

330

± 20

630

2.2

max.

Power MOSFET

Max.

0.50

–––

PD - 97459

Source

1.6m

320A

240A

40V

Units

W/°C

°C/W

°C

Related parts for AUIRF2804S-7P

AUIRF2804S-7P Summary of contents

Page 1

... R JC Case-to-Sink, Flat, Greased Surface Junction-to-Ambient JA R Junction-to-Ambient (PCB Mount, steady state) JA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE AUIRF2804S- Gate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Package Limited Parameter ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DSS J R SMD Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com † Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Related keywords

AUIRF2804S-7P datasheet
AUIRF2804S-7P data sheet
AUIRF2804S-7P pdf datasheet
AUIRF2804S-7P component
AUIRF2804S-7P part
AUIRF2804S-7P distributor
AUIRF2804S-7P RoHS
AUIRF2804S-7P datasheet download

AUIRF2804S-7P International Rectifier, AUIRF2804S-7P Datasheet

AUIRF2804S-7P

Specifications of AUIRF2804S-7P

Available stocks

Related parts for AUIRF2804S-7P

AUIRF2804S-7P Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Page 7

Page 8

Page 9

Page 10

Page 11

Page 12

Page 13

Related keywords