AUIRF2804S-7P International Rectifier, AUIRF2804S-7P Datasheet - Page 7

• Manufacturer Part Number: AUIRF2804S-7P
• Description: MOSFET N-CH 40V 240A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF2804S-7P

• Input Capacitance (ciss) @ Vds: 6930pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab), TO-263CB
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 1.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes
• Configuration: Single Quint Source
• Resistance Drain-source Rds (on): 1.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 320 A
• Power Dissipation: 330 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 170 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
GS
t p
t p
1K
I AS
D.U.T
0.01
L
Q
Charge
Q
V
GD
G
(BR)DSS
DUT
15V
L
DRIVER
+
-
V DD
A
VCC
Fig 14. Threshold Voltage vs. Temperature
2500
2000
1500
1000
500
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Fig 12c. Maximum Avalanche Energy
-75 -50 -25
25
I D = 1.0A
I D = 1.0mA
I D = 250µA
Starting T J , Junction Temperature (°C)
50
vs. Drain Current
T J , Temperature ( °C )
0
75
25
100
50
75
TOP
BOTTOM
125
100 125 150 175
150
33A
21A
160A
I D
7
175