PC28F640P33B85A NUMONYX, PC28F640P33B85A Datasheet - Page 36

IC FLASH 64MBIT 85NS 64EZBGA

PC28F640P33B85A

Manufacturer Part Number
PC28F640P33B85A
Description
IC FLASH 64MBIT 85NS 64EZBGA
Manufacturer
NUMONYX
Series
StrataFlash™r
Datasheet

Specifications of PC28F640P33B85A

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
64M (4M x 16)
Speed
85ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Cell Type
NOR
Density
64Mb
Access Time (max)
85ns
Interface Type
Parallel/Serial
Boot Type
Bottom
Address Bus
22b
Operating Supply Voltage (typ)
2.5/3/3.3V
Operating Temp Range
-40C to 85C
Package Type
EZBGA
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
4M
Supply Current
28mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
888226
888226
PC28F640P33B85
PC28F640P33B85 888226

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PC28F640P33B85A
Manufacturer:
Micron Technology Inc
Quantity:
10 000
7.4
Table 19: AC Write Specifications
Datasheet
36
W1
W2
W3
W4
W5
W6
W7
W8
W9
W10
W11
W12
W13
W14
W16
Write to Asynchronous Read Specifications
W18
Write to Synchronous Read Specifications
W19
W20
Write Specifications with Clock Active
W21
W22
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
Num
Write timing characteristics during erase suspend are the same as write-only operations.
A write operation can be terminated with either CE# or WE#.
Sampled, not 100% tested.
Write pulse width low (t
(whichever occurs first). Hence, t
Write pulse width high (t
(whichever occurs last). Hence, t
t
V
This specification is only applicable when transitioning from a write cycle to an asynchronous read. See spec W19 and
W20 for synchronous read.
When doing a Read Status operation following any command that alters the Status Register, W14 is 20 ns.
Add 10 ns if the write operations results in a RCR or block lock status change, for the subsequent read operation to
reflect this change.
These specs are required only when the device is in a synchronous mode and clock is active during address setup
phase.
WHVH
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
PP
PHWL
ELWL
WLWH
DVWH
AVWH
WHEH
WHDX
WHAX
WHWL
VPWH
QVVL
QVBL
BHWH
WHGL
WHQV
WHAV
WHCH/L
WHVH
VHWL
CHWL
Symbol
and WP# should be at a valid level until erase or program success is determined.
or t
AC Write Specifications
WHCH/L
RST# high recovery to WE# low
CE# setup to WE# low
WE# write pulse width low
Data setup to WE# high
Address setup to WE# high
CE# hold from WE# high
Data hold from WE# high
Address hold from WE# high
WE# pulse width high
V
V
WP# hold from Status read
WP# setup to WE# high
WE# high to OE# low
WE# high to read valid
WE# high to Address valid
WE# high to Clock valid
WE# high to ADV# high
ADV# high to WE# low
Clock high to WE# low
PP
PP
must be met when transitioning from a write cycle to a synchronous burst read.
setup to WE# high
hold from Status read
WLWH
WHWL
or t
or t
ELEH
WHWL
WLWH
EHEL
Parameter
) is defined from CE# or WE# low (whichever occurs last) to CE# or WE# high
) is defined from CE# or WE# high (whichever occurs first) to CE# or WE# low
= t
= t
EHEL
ELEH
= t
= t
WHEL
WLEH
= t
= t
EHWL
ELWH
).
.
Numonyx™ StrataFlash
t
AVQV
Min
150
200
200
50
50
50
20
19
19
0
0
0
0
0
0
0
0
-
-
+ 35
Max
®
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Embedded Memory (P33)
Order Number: 314749-05
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
November 2007
1,2,3,6,10
1,2,3,6,10
1,2,3,6,8
1,2,3,11
1,2,3,7
1,2,3,7
Notes
1,2,3
1,2,3
1,2,4
1,2,5
1,2,9
1,2

Related parts for PC28F640P33B85A