NTD65N03R-35G ON Semiconductor, NTD65N03R-35G Datasheet - Page 4

• Manufacturer Part Number: NTD65N03R-35G
• Description: MOSFET Small Signal 25V 65A N-Channel
• Manufacturer: ON Semiconductor

Specifications of NTD65N03R-35G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0097 Ohms
• Forward Transconductance Gfs (max / Min): 27 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: IPAK-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
2400
2000
1600
1200
10
400
800
1
0
1
0
V
I
V
Figure 9. Resistive Switching Time Variation
D
V
DS
GS
GS
= 35 A
= 10 V
= 10 V
= 0 V
Figure 7. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (V)
4
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
8
10
100
C
C
C
10
oss
rss
iss
1
0.1
12
Figure 11. Maximum Rated Forward Biased
V
SINGLE PULSE
T
V
C
GS
DS
= 25°C
= 20 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
16
T
R
THERMAL LIMIT
PACKAGE LIMIT
J
Safe Operating Area
http://onsemi.com
= 25°C
DS(on)
t
t
t
t
f
r
d(on)
d(off)
1
NTD65N03R
100
LIMIT
20
4
70
60
50
40
30
20
10
0
8
6
4
2
0
0
0
10
V
Drain−to−Source Voltage versus Total Charge
GS
Figure 10. Diode Forward Voltage versus
Q
= 0 V
1
V
0.2
SD
10 ms
1 ms
10 ms
100 ms
dc
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
4
g
, TOTAL GATE CHARGE (nC)
100
0.4
Q
Q
T
T
2
J
Current
= 150°C
8
0.6
0.8
T
12
J
= 25°C
V
I
T
D
GS
J
= 30 A
= 25°C
1
16