NTD65N03R-35G ON Semiconductor, NTD65N03R-35G Datasheet - Page 6

• Manufacturer Part Number: NTD65N03R-35G
• Description: MOSFET Small Signal 25V 65A N-Channel
• Manufacturer: ON Semiconductor

Specifications of NTD65N03R-35G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0097 Ohms
• Forward Transconductance Gfs (max / Min): 27 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: IPAK-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
S
F
1
B
R
4
2
3
L
A
D
H
2 PL
0.13 (0.005)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
J
0.228
5.80
M
C
T
−T−
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
E
DPAK (SINGLE GUAGE)
SEATING
PLANE
0.244
6.20
U
http://onsemi.com
CASE 369AA−01
NTD65N03R
ISSUE A
0.101
2.58
6
0.118
3.0
0.063
1.6
SCALE 3:1
Z
6.172
0.243
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PER ANSI Y14.5M, 1982.
DIM
PIN 1. GATE
A
B
C
D
H
R
U
E
F
J
L
S
V
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.025
0.018
0.030
0.386
0.018
0.180
0.024
0.020
0.035
0.155
MIN
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.024
0.045
0.410
0.023
0.215
0.040
0.050
MAX
−−−
−−−
MILLIMETERS
5.97
6.35
2.19
0.63
0.46
0.77
9.80
0.46
4.57
0.60
0.51
0.89
3.93
MIN
2.29 BSC
10.40
MAX
6.22
6.73
2.38
0.89
0.61
1.14
0.58
5.45
1.01
1.27
−−−
−−−