NTE2708 NTE ELECTRONICS, NTE2708 Datasheet

NTE2708

Manufacturer Part Number

NTE2708

Description

IC, EPROM, 8KBIT, 450NS, DIP-24

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE2708.pdf (4 pages)

Specifications of NTE2708

Memory Type

EPROM - OTP

Memory Size

8Kbit

Memory Configuration

8K X 8

Access Time

450ns

Supply Voltage Range

4.75V To 5.25V

Memory Case Style

DIP

No. Of Pins

Current page: 1 of 4
Download datasheet (31Kb)

Description:

The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has

8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–

gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (includ-

ing program data inputs) can be driven by Series 74 TTL circuits without the use of external pull–up

resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The

data outputs for the NTE2708 are three–state for OR tying multiple devices on a common bus.

This EPROM is designed for high–density fixed memory applications where fast turn arounds and/or

program changes are required. This device is designed for operation from 0 to +70 C and is supplied

in a 24–Lead DIP package for insertion in mounting–hole rows on 600–mil (15.2 mm) centers.

Features:

D 1024 X 8 Organization

D All Inputs and Outputs Fully TTL Compatible

D Static Operation (No Clocks, No Refresh)

D Performance Ranges:

D 3–State Outputs for OR–Ties

D 8–Bit Output

D Plug–Compatible Pin–Outs Allowing Interchangeability

Absolute Maximum Ratings: (T

Supply Voltage, V

All Input Voltage (except program) (Note 2)

Program Input (Note 2)

Output Voltage (operating, with respect to V

Operating free–air temperature range

Storage temperature Range

Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permenant

Note 2. Under absolute maximum ratings, voltage values are with respect to the most–negative sup-

damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions beyond those indicated in the “Recommended Operating

Conditions” section of this specification is not implied. Exposure to absolute–maximum–

rated conditions for extended periods may affect device reliability.

ply voltage, V

sheet, voltage values are with respect to V

Max Access: 450ns

Min Cycle: 450ns

(Note 2)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

(substrate), unless otherwise noted. Throughout the remainder of this data

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NMOS, 8K UV EPROM, 450ns

= 0 to +70 C, Note 1 unless otherwise specified)

Integrated Circuit

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE2708

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55 C to 125 C

–0.3 to +15V

–0.3 to +20V

–0.3 to +15V

–0.3 to +35V

–0.3 to +20V

0 C to 70 C

–2 to +7V

Related parts for NTE2708

NTE2708 Summary of contents

Page 1

... Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The data outputs for the NTE2708 are three–state for OR tying multiple devices on a common bus. This EPROM is designed for high–density fixed memory applications where fast turn arounds and/or program changes are required. This device is designed for operation from 0 to +70 C and is supplied in a 24– ...

Page 2

... The program pin must be held below V Operation (Program Mode): Erase Before programming, the NTE2708 is erased by exposing the chip through the transparent lid to high– intensity ultraviolet light (wavelength 2537 angstroms). The recommended minimum exposure dose (= UV intensity x exposure time) is fifteen watt–seconds per square centimeter. Thus, a typical 12 milliwatt per square centimeter, filterless UV lamp will erase the device in a minimum of 21 minutes ...

Page 3

Recommended Operating Conditions: Supply Voltage High–Level Input Voltage (Except Program & Program Enable) High–Level Program Enable Input Voltage High–Level Program Input Voltage Low–Level Input Voltage (Except Program) Low–Level Program Input Voltage V High–Level Program Pulse Input Current (Sink) Low–Level Program ...

Page 4

T = +25 C Program Characteristics Over Recommended Supply Voltage Range: A Pulse Width, Program Pulse Transition Times (Except Program Pulse) Transition Times, Program Pulse Address Setup Time Data Setup Time Program Enable Setup Time Address Hold Time Address Hold ...

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