AS6C8016-55ZIN ALLIANCE MEMORY, AS6C8016-55ZIN Datasheet
AS6C8016-55ZIN
Specifications of AS6C8016-55ZIN
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AS6C8016-55ZIN Summary of contents
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... It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8016 operates from a single power supply of 2 ...
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... DQ11 31 DQ10 30 DQ9 29 DQ8 A10 25 A11 24 A12 23 A13 SYMBOL -0 -40 to 85(I grade STG OUT T SOLDER Alliance Memory Inc. AS6C8016 A LB# OE DQ8 UB CE# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D Vss DQ11 A17 A7 DQ3 Vcc E Vcc DQ12 NC A16 DQ4 Vss F DQ14 DQ13 A14 ...
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... Other pins at 0. -0.2V CC CE# V -0.2V ≦ CC Other pins at 0. -0.2V CC (TYP.) and ℃ SYMBOL MIN I/O Alliance Memory Inc. AS6C8016 SUPPLY CURRENT DQ8-DQ15 High – SB1 High – Z High – CC1 High – Z High – CC1 OUT D OUT High – ...
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... NOVEMBER/2007, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM 0. 0.2V CC 3ns 1. 30pF + 1TTL SYM. AS6C8016 ACE CLZ t OLZ t CHZ t OHZ BHZ t BLZ SYM. AS6C8016 WHZ t BW Alliance Memory Inc. AS6C8016 /I = -1mA/2mA OH OL UNIT UNIT Page ...
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... X 8 BIT LOW POWER CMOS SRAM Data Valid ACE OLZ t BLZ t CLZ Data Valid . = 5pF. Transition is measured ±500mV from steady state less than less than t CHZ CLZ BHZ Alliance Memory Inc. AS6C8016 OHZ t BHZ t CHZ High-Z is the limiting parameter less than t BLZ OHZ OLZ. Page ...
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... WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) Address CE# LB#,UB WE# Dout Din WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) Address CE LB#,UB# WE# Dout Din NOVEMBER/2007, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM WHZ High-Z ( Data Valid WHZ High-Z ( Data Valid Alliance Memory Inc. AS6C8016 ( Page ...
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... C = 5pF. Transition is measured ±500mV from steady state. OW WHZ L NOVEMBER/2007, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM (1,2,5, WHZ High-Z ( Data Valid must be greater than t WP WHZ Alliance Memory Inc. AS6C8016 allow the drivers to turn off and data Page ...
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... TEST CONDITION > 2.0V CC > _ CE# V -0.2V CC Other pins at 0. -0.2V CC See Data Retention Waveforms (below) (CE# controlled) > 2.0V DR > _ CE# Vcc-0.2V (LB#, UB# controlled) > 2.0V DR > _ LB#,UB# Vcc-0.2V Alliance Memory Inc. AS6C8016 MIN. TYP. MAX. UNIT 2 Vcc(min Vcc(min Page µ ...
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... Alliance Memory Inc NOM. MAX. - 47.2 3.9 5.9 39.4 41.3 - 17.7 - 8.3 725 733 463 473 400 408 31.5 - 19.7 23.6 31 Page ...
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... January 2007 NOVEMBER 2007 512K X 16 BIT SUPER LOW POWER CMOS SRAM 48-ball 6mm × 8mm TFBGA Package Outline Dimension NOVEMBER/2007, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM Alliance Memory Inc. AS6C8016 Page ...
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... NOVEMBER 2007 January 2007 512K X 16 BIT SUPER LOW POWER CMOS SRAM ORDERING INFORMATION Alliance Organization AS6C8016 -55ZIN 512K x 16 AS6C8016 -55BIN 512K x 16 PART NUMBERING SYSTEM AS6C 8016 Device Number 380 = 8M low power SRAM prefix 16 = x16 NOVEMBER/2007, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM ...
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... Alliance against allclaims arising from such use. NOVEMBER/2007, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM 512K X 16 BIT LOW POWER CMOS SRAM Alliance Memory Inc. AS6C8016 Copyright © Alliance Memory All Rights Reserved Page ...