AS6C8016-55BINTR Alliance Memory, AS6C8016-55BINTR Datasheet

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AS6C8016-55BINTR

Manufacturer Part Number
AS6C8016-55BINTR
Description
SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
Manufacturer
Alliance Memory
Datasheet

Specifications of AS6C8016-55BINTR

Rohs
yes
Factory Pack Quantity
2000
FEATURES
PRODUCT FAMILY
FUNCTIONAL BLOCK DIAGRAM
AS6C8016(I)
Lower Byte
DQ8-DQ15
Upper Byte
DQ0-DQ7
Operating current : 30mA (TYP.)
Standby current : 6µA (TYP.) LL-version
A0-A18
Fast access time : 55ns
Low power consumption:
Single 2.7V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
Lead free and green package available
Package : 44-pin 400 mil TSOP-II
Data byte control : LB# (DQ0 ~ DQ7)
WE#
CE#
OE#
UB#
LB#
NOVEMBER/2007, V 1.0
January 2007
NOVEMBER 2007
Vcc
Vss
Product
Family
48-ball 6mm x 8mm TFBGA
DECODER
CONTROL
I/O DATA
CIRCUIT
CIRCUIT
Temperature
Operating
UB# (DQ8 ~ DQ15)
-40 ~ 85℃
512K X 16 BIT SUPER LOW POWER CMOS SRAM
MEMORY ARRAY
COLUMN I/O
512Kx16
Vcc Range
2.7 ~ 5.5V
Alliance Memory Inc.
512K X 8 BIT LOW POWER CMOS SRAM
Speed
55ns
GENERAL DESCRIPTION
The AS6C8016 is a 8,388,608-bit low power
CMOS static random access memory organized as
524,288 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS6C8016 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The AS6C8016 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
PIN DESCRIPTION
SYMBOL
A0 - A18
DQ0 – DQ15 Data Inputs/Outputs
CE#
WE#
OE#
LB#
UB#
V
V
CC
SS
Standby(I
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
6µA(LL)
DESCRIPTION
SB1,
Power Dissipation
TYP.)
Operating(Icc,TYP.)
Page 1 of 12
AS6C8016
30mA

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AS6C8016-55BINTR Summary of contents

Page 1

... It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8016 operates from a single power supply of 2 ...

Page 2

... A10 25 A11 24 A12 23 A13 SYMBOL -0 -40 to 85(I grade STG OUT T SOLDER Alliance Memory Inc. AS6C8016 A LB# OE DQ8 UB CE# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D Vss DQ11 A17 A7 DQ3 Vcc E Vcc ...

Page 3

... CE# V -0.2V ≦ CC Other pins at 0. -0.2V CC (TYP.) and ℃ SYMBOL MIN I/O Alliance Memory Inc. AS6C8016 SU P PLY CURRENT DQ8-DQ15 High – SB1 High – Z High – CC1 High – Z High – CC1 OUT D OUT High – ...

Page 4

... C = 30pF + 1TTL SYM. AS6C8016 ACE CLZ t OLZ t CHZ t OHZ BHZ t BLZ SYM. AS6C8016 WHZ t BW Alliance Memory Inc. AS6C8016 /I = -1mA/2mA OH OL UNIT UNIT Page ...

Page 5

... OE t OLZ t BLZ t CLZ Data Valid . = 5pF. Transition is measured ±500mV from steady state less than less than t CHZ CLZ BHZ Alliance Memory Inc. AS6C8016 OHZ t BHZ t CHZ High-Z is the limiting parameter less than t BLZ OHZ OLZ. ...

Page 6

... Dout Din NOVEMBER/2007, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM WHZ High-Z ( Data Valid WHZ High-Z ( Data Valid Alliance Memory Inc. AS6C8016 ( Page ...

Page 7

... WHZ L NOVEMBER/2007, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM (1,2,5, WHZ High-Z ( Data Valid must be greater than t WP WHZ Alliance Memory Inc. AS6C8016 allow the drivers to turn off and data Page ...

Page 8

... 1.5V CC > _ CE# V -0.2V CC Other pins at 0. -0.2V CC See Data Retention Waveforms (below) (CE# controlled) V > _ 1.5V DR > _ CE# Vcc-0.2V (LB#, UB# controlled) > 1.5V DR > _ LB#,UB# Vcc-0.2V Alliance Memory Inc. AS6C8016 MIN. TYP. MAX. UNIT 1 Vcc(min Vcc(min ...

Page 9

... X 8 BIT LOW POWER CMOS SRAM DIMENSIONS IN MILS NOM. MAX. MIN. - 1.20 - 0.10 0.15 2.0 1.00 1.05 37.4 - 0.45 11.8 - 0.21 4.7 18.415 18.618 717 11.760 12.014 453 10.160 10.363 392 0.800 - - 0.50 0.60 15.7 0.805 - - - 0.076 - Alliance Memory Inc NOM. MAX. - 47.2 3.9 5.9 39.4 41.3 - 17.7 - 8.3 725 733 463 473 400 408 31.5 - 19.7 23.6 31 Page ...

Page 10

... January 2007 NOVEMBER 2007 512K X 16 BIT SUPER LOW POWER CMOS SRAM 48-ball 6mm × 8mm TFBGA Package Outline Dimension NOVEMBER/2007, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM Alliance Memory Inc. AS6C8016 Page ...

Page 11

... NOVEMBER 2007 January 2007 512K X 16 BIT SUPER LOW POWER CMOS SRAM ORDERING INFORMATION Alliance Organization AS6C8016 -55ZIN 512K x 16 AS6C8016 -55BIN 512K x 16 PART NUMBERING SYSTEM AS6C 8016 Device Number low power SRAM prefix 16 = x16 NOVEMBER/2007, V 1.0 512K LOW POWER CMOS SRAM ...

Page 12

... Alliance against allclaims arising from such use. NOVEMBER/2007, V 1.0 512K X 8 BIT LOW POWER CMOS SRAM 512K X 16 BIT LOW POWER CMOS SRAM Alliance Memory Inc. AS6C8016 Copyright © Alliance Memory All Rights Reserved Page ...

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