AS6C8016-55BINTR Alliance Memory, AS6C8016-55BINTR Datasheet - Page 8

• Manufacturer Part Number: AS6C8016-55BINTR
• Description: SRAM 8M, 2.7-5.5V, 55ns 512K x 16 Asyn SRAM
• Manufacturer: Alliance Memory

Specifications of AS6C8016-55BINTR

• Rohs: yes
• Factory Pack Quantity: 2000

DATA RETENTION CHARACTERISTICS
V
Data Retention Current
Chip Disable to Data
Retention Time
Recovery Time
t
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1)
Low Vcc Data Retention Waveform (2)
RC
LB#,UB#
CC
CE#
*
Vcc
Vcc
= Read Cycle Time
NOVEMBER/2007, V 1.0
January 2007
NOVEMBER 2007
for Data Retention
PARAMETER
Vcc(min.)
Vcc(min.)
SYMBOL
V
V
t
IH
t
IH
t
V
CDR
CDR
I
CDR
512K X 16 BIT SUPER LOW POWER CMOS SRAM
t
DR
DR
R
CE# V
V
CE#
Other pins at 0.2V or V
See Data Retention
Waveforms (below)
CC
= 1.5V
> _
> _
(CE# controlled)
(LB#, UB# controlled)
Alliance Memory Inc.
LB#,UB#
TEST CONDITION
V
CC
CE#
CC
V
V
- 0.2V
-0.2V
DR
DR
> _
> _
> _
Vcc-0.2V
> _
512K X 8 BIT LOW POWER CMOS SRAM
1.5V
1.5V
Vcc-0.2V
CC
-0.2V
Vcc(min.)
Vcc(min.)
t
t
R
R
V
V
IH
IH
t
1.5
MIN.
RC
0
-
*
TYP.
-
-
-
4
Page 8 of 12
MAX.
AS6C8016
5.5
-
-
50
UNIT
ns
ns
V
µ A