M29W400DB45N6E NUMONYX, M29W400DB45N6E Datasheet - Page 33

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M29W400DB45N6E

Manufacturer Part Number
M29W400DB45N6E
Description
MEMORY, FLASH, NOR, 4MB, B/B, 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of M29W400DB45N6E

Memory Size
4Mbit
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Package / Case
TSOP
Access Time
45ns
Memory
RoHS Compliant
Memory Type
Flash - Boot Block
Memory Configuration
512K X 8, 256K X 16
Interface Type
Parallel
Rohs Compliant
Yes

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0
Figure 13. Write AC waveforms, Chip Enable controlled
Table 14.
1. Sampled only, not 100% tested.
Symbol
t
t
EHRL
t
VCHWL
t
t
t
t
t
t
t
t
t
EHWH
t
WLEL
DVEH
EHDX
GHEL
EHGL
ELEH
EHEL
AVAV
AVEL
ELAX
A0-A17/
A–1
W
G
E
DQ0-DQ7/
DQ8-DQ15
V CC
RB
(1)
Write AC characteristics, Chip Enable controlled
t
t
t
BUSY
t
t
t
t
OEH
Alt
t
t
t
CPH
t
t
VCS
WC
WS
WH
CP
DS
DH
AH
AS
Address Valid to Next Address Valid
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Input Valid to Chip Enable High
Chip Enable High to Input Transition
Chip Enable High to Write Enable High
Chip Enable High to Chip Enable Low
Address Valid to Chip Enable Low
Chip Enable Low to Address Transition
Output Enable High Chip Enable Low
Chip Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
tVCHWL
CC
High to Write Enable Low
tWLEL
tGHEL
tAVEL
Parameter
tAVAV
VALID
tELEH
tDVEH
tEHRL
VALID
tELAX
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tEHWH
tEHGL
tEHEL
45
45
30
25
30
40
30
50
tEHDX
0
0
0
0
0
0
M29W400D
55
55
30
30
30
45
30
50
0
0
0
0
0
0
AI01870C
70
70
30
45
30
45
35
50
0
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
33/48

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