SKIM459GD12E4 SEMIKRON, SKIM459GD12E4 Datasheet - Page 2

• Manufacturer Part Number: SKIM459GD12E4
• Description: IGBT Module
• Manufacturer: SEMIKRON

Specifications of SKIM459GD12E4

• Dc Collector Current: 554A
• Collector Emitter Voltage Vces: 1.2kV
• Collector Emitter Voltage V(br)ceo: 800mV
• No. Of Pins: 33
• Package / Case: SKiM 93
• Family/system: SKiM 63\/93
• Voltage (v): 1200
• Current (a): 450
• Chip-type: IGBT 4 (Trench)
• Case: SKIM 93
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SKiM459GD12E4
Trench IGBT Modules
SKiM459GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• V
• Low inductance case
• Isolated by Al
• Pressure contact technology
• High short circuit capability, self
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
2
SKiM
coefficient
Bonded) ceramic substrate
forthermal contacts and
electricalcontacts
limiting to 6 x I
CE(sat)
with positive temperature
®
93
2
O
C
GD
3
DCB (Direct Copper
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
M
M
w
Temperature sensor
R
B
F
RRM
CE
F
F0
rr
100/125
th(j-s)
CC'+EE'
100
rr
s
t
= V
EC
Rev. 2 – 26.08.2009
I
V
chip
I
di/dt
V
V
terminal-chip
Conditions
per diode
to heat sink (M4)
T
R
T[K];
F
F
GE
GE
CC
Sensor
(T)
= 450 A
= 450 A
off
= R
= 0 V
= -15 V
= 600 V
= 8880 A/µs
= 100 °C (R
100
exp[B
100/125
25
T
T
T
T
T
T
T
T
T
T
T
to terminals (M6)
= 5 kΩ)
j
j
j
j
j
j
j
j
j
s
s
(1/T-1/373)];
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
min.
2.5
3
4096
typ.
570
339
2.1
2.1
1.3
0.9
1.9
2.6
0.3
0.5
80
40
10
© by SEMIKRON
0.155
max.
1100
2.5
2.4
1.5
1.1
2.1
2.8
15
4
5
Unit
K/W
mΩ
mΩ
mΩ
mΩ
Nm
Nm
Nm
µC
mJ
nH
Ω
V
V
V
V
A
g
K