2MBI150U2A-060-50 FUJI ELECTRIC, 2MBI150U2A-060-50 Datasheet

2MBI150U2A-060-50

Manufacturer Part Number

2MBI150U2A-060-50

Description

DUAL IGBT MODULE 150A 600V NPT

Manufacturer

FUJI ELECTRIC

Datasheet

1.2MBI150U2A-060-50.pdf (4 pages)

Specifications of 2MBI150U2A-060-50

Module Configuration

Dual

Transistor Polarity

N Channel

Dc Collector Current

150A

Collector Emitter Voltage Vces

2.35V

Power Dissipation Max

500W

Collector Emitter Voltage V(br)ceo

600V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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2MBI150U2A-060

IGBT Module U-Series

· High speed switching

· Voltage drive

· Low inductance module structure

Item

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector Power Dissipation

Junction temperature

Storage temperature

Isolation voltage between terminal and copper base *1

Screw Torque

Item

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip*

Thermal resistance

Contact Thermal resistance

Items

1 :

2 :

:Biggest internal terminal resistance among arm.

Thermal resistance characteristics

: This is the value which is defined mounting on the additional cooling fin with thermal compound.

Electrical characteristics (at Tj=25°C unless otherwise specified)

Recommendable value : Mounting 2.5 to 3.5N·m(M5 or M5), Terminal 2.5 to 3.5 N·m(M5)

All terminals should be connected together when isolation test will be done.

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Features

Maximum ratings and characteristics

Symbols

(terminal)

(chip)

(terminal)

(chip)

R lead

Rth(j-c)

Rth(c-f)*

CES

GES

off

r(i)

GE(th)

CE(sat)

ies

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Mounting *

Terminals *

Applications

Conditions

IGBT

FWD

With thermal compound

=150A

Conditions

= 24

=20V, I

=10V, V

=0V, V

=15V, I

=±15V

=0V

=300V

Symbol

-I

stg

CES

GES

iso

pulse

=150mA

=150A

=600V

=±20V

=0V, f=1MHz

600V / 150A 2 in one-package

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Conditions

Continuous

AC:1min.

1 device

1ms

Characteristics

Min.

–

6.2

–

2. Equivalent circuit

Typ.

Equivalent Circuit Schematic

–

0.05

–

6.7

2.05

2.30

1.80

2.05

0.40

0.22

0.16

0.48

0.07

1.80

1.85

1.60

1.65

–

1.39

Rating

-40 to +125

+150

2500

600

±20

150

300

150

300

500

3.5

Max.

200

0.25

0.46

–

1.0

7.7

2.35

–

1.20

0.60

–

1.20

0.45

2.20

–

0.35

–

Unit

°C

VAC

N·m

µs

°C/W

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2MBI150U2A-060-50 Summary of contents

Page 1

... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 400 VGE=20V15V 300 200 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 400 300 Tj=25°C 200 100 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) 100.0 10.0 1 ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=24 , Tj= 25°C 10000 1000 toff ton 100 10 0 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=150A, VGE=±15V, Tj= 25°C 10000 1000 100 10 1.0 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=150A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) 400 300 200 100 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] Outline Drawings, mm M232 chip 1000 T j=25 °C T j=125°C 100 FWD IGBT 0.100 1.000 IGBT Module Reverse recovery characteristics (typ.) Vcc=300V, VGE=± ...

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