2MBI300U2B-060-50 FUJI ELECTRIC, 2MBI300U2B-060-50 Datasheet

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2MBI300U2B-060-50

Manufacturer Part Number
2MBI300U2B-060-50
Description
DUAL IGBT MODULE 300A 600V NPT
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 2MBI300U2B-060-50

Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
300A
Collector Emitter Voltage Vces
2.45V
Power Dissipation Max
1kW
Collector Emitter Voltage V(br)ceo
600V
Transistor
RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2MBI300U2B-060-50
Manufacturer:
FUJI
Quantity:
134
Oct. 30 ’03
Oct. 30 ’03
K.Yamada
S.Ogawa
S.Miyashita
Device Name
Type Name
Spec. No.
SPECIFICATION
Y.Seki
:
:
:
IGBT module
2MBI300U2B-060
MS5F5617
MS5F 5617
H04-004-07b
1
13
a

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2MBI300U2B-060-50 Summary of contents

Page 1

... SPECIFICATION Device Name : Type Name : Spec. No. : S.Ogawa Oct. 30 ’03 Y.Seki S.Miyashita Oct. 30 ’03 K.Yamada IGBT module 2MBI300U2B-060 MS5F5617 MS5F 5617 H04-004-07b ...

Page 2

Classi- Date Ind. fication Enactment Oct.-30 -’ value(P4/13), VF carve(P11/ a Jan.-16 -’04 Revision 13) ...

Page 3

... Type Name : 2MBI300U2B-060 1. Outline Drawing ( Unit : Equivalent circuit PKG.No. M233 LABEL MS5F 5617 H04-004-03a ...

Page 4

Maximum Ratings ( at Tc= 25 Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base * voltage Screw Torque (* ) All terminals should be connected together when ...

Page 5

... Lot.No. 7.Applicable category This specification is applied to IGBT Module named 2MBI300U2B-060 . 8.Storage and transportation notes The module should be stored at a standard temperature Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. ...

Page 6

Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...

Page 7

Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...

Page 8

Reliability Test Results Test cate- Test items gorie s 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle ...

Page 9

Collector current vs. Collector-Emitter voltage (typ.) Tj chip 750 VGE=20V 15V 600 12V 450 300 150 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 750 Tj=25 600 ...

Page 10

Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=9.1 , Tj= 25 10000 1000 toff ton 100 10 0 150 300 450 Collector current : Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=300A, VGE=±15V, Tj= 25 ...

Page 11

Forward current vs. Forward on voltage (typ.) chip 750 600 Tj=25 450 300 150 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 0.100 Pulse width ...

Page 12

This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. Connect adequate fuse or protector of circuit between three-phase line and this product to ...

Page 13

... Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights ...

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