6MBP150TEA-060-50 FUJI ELECTRIC, 6MBP150TEA-060-50 Datasheet

6MBP150TEA-060-50

Manufacturer Part Number

6MBP150TEA-060-50

Description

IGBT, 6 PACK MOD, 600V, 150A, P622

Manufacturer

FUJI ELECTRIC

Datasheet

1.6MBP150TEA-060-50.pdf (8 pages)

Specifications of 6MBP150TEA-060-50

Dc Collector Current

150A

Collector Emitter Voltage Vces

1.8V

Power Dissipation Max

431W

Collector Emitter Voltage V(br)ceo

600V

Operating Temperature Range

-20Â°C To +100Â°C

Transistor Case

RoHS Compliant

Transistor Case Style

Module

No. Of Pins

Rohs Compliant

Yes

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6MBP150TEA060

Econo IPM series

Item

Bus voltage

Collector-Emitter voltage *1

Supply voltage of Pre-Driver *4

Input signal voltage *5

Input signal current

Alarm signal voltage *6

Alarm signal current *7

Junction temperature

Operating case temperature

Storage temperature

Solder temperature *8

Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)

Screw torque

Note

· Temperature protection provided by directly detecting the junction

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

temperature of the IGBTs

built-in control circuit

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Features

Maximum ratings and characteristics

*1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W

*2 : 125

*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13

*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.

*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

Collector current

*3 : Pc=125

Collector power dissipation One transistor *3

*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.

*8 : Immersion time 10

°C

/FWD Rth(j-c)/(Ic x VF MAX)=125/0.47/(150 x 2.6) x 100=68.2%

°C

/IGBT Rth(j-c)=125/0.29=431W [Inverter]

1sec.

Mounting (M5)

1ms

Surge

Duty=68.2% *2

Short operating

Symbol

-I

ALM

opr

stg

sol

DC(surge)

CES

ALM

iso

200

Min.

-20

-40

-0.5

Rating

600V / 150A 6 in one-package

AC2500

Vcc+0.5

450

500

400

600

150

300

150

431

150

100

125

260

Vcc

Max.

3.5

Unit

°C

N·m

Related parts for 6MBP150TEA-060-50

6MBP150TEA-060-50 Summary of contents

Page 1

... Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in ...

Page 2

... Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy (A non-repetition) Control circuit Item Supply current of P-line side pre-driver(one unit) ...

Page 3

... Vin Vin Vin(th) Vin(th /Vin /Vin Vge (Inside IPM ) Vge (Inside IPM ) Fault (Inside IPM Fault (Inside IPM ) ) normal normal /ALM /ALM ALM ALM VccU VccU P P 20k 20k IPM IPM DC DC VinU VinU U U 15V 15V SW1 SW1 GNDU ...

Page 4

... Block diagram VccU VccU VinU VinU 1.5k 1.5k ALM ALM Vz Vz GNDU GNDU 1 1 Vcc V Vcc VinV VinV 1.5k 1.5k ALM ALM Vz Vz GNDV GNDV 5 5 VccW VccW 12 12 VinW VinW 1.5k 1.5k ALM ALM Vz Vz GNDW GNDW 9 9 Vcc ...

Page 5

... Characteristics Control circuit characteristics (Respresentative) P ower sup ply current vs. Switching frequency Tc=1 25°C 70 P-sid e 60 N-sid Switch ing frequency : Hz) Under voltage vs. Junction temp erature tion (°C) Alarm hold tim e vs. P ower sup ply voltag Power voltag e : Vcc ( cc=17V V cc= 15V 1 ...

Page 6

... Main circuit characteristics (Respresentative) Collector current vs. Collector-Em itter voltage Tj=25°C(Chip cc= 17V llector-Em itter vo lta Vce (V) Collector current vs. Collector-Em itter voltage Tj=125 °C(Chip cc=17V 0 llector-Em itter vo lta Vce (V) Forward current vs. Forward voltage (Chip 0 ard vol (V) Collector current vs. Collector-Em itter voltage ...

Page 7

... Switching Loss vs. Collector Current Edc=30 0V,Vcc=15 V,Tj=25° Collec tor cu rren (A) Reversed b iased safe operating area Vcc=15V, RBS OA(Rep etitive pu lse 100 200 300 400 Collector-Em itter voltag e : Vce (V) Power d eratin g for IG BT (per device Case Tem p eratu (° 160 1 25° ...

Page 8

... Switching tim e vs. Collector current Edc=30 0V,Vcc=15 V,Tj=25° Col lector cu rren (A) Reverse recovery characteristics trr,Irr vs. ard cu rren t:IF(A) 10 000 000 100 250 trr12 5°C trr2 5° C Irr12 5°C Irr2 5° 250 IGBT-IPM Switching tim e vs. Collector current Edc=300 V,V cc=15V,Tj=1 25°C ...

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