SI5515CDC-T1-E3 Vishay, SI5515CDC-T1-E3 Datasheet

DUAL N/P CHANNEL MOSFET, 20V, 1206

SI5515CDC-T1-E3

Manufacturer Part Number
SI5515CDC-T1-E3
Description
DUAL N/P CHANNEL MOSFET, 20V, 1206
Manufacturer
Vishay
Datasheet

Specifications of SI5515CDC-T1-E3

Transistor Polarity
N And P Channel
Continuous Drain Current Id
4A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
800mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI5515CDC-T1-E3
Quantity:
70 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
N-Channel
P-Channel
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
1206-8 ChipFET
D
1
D
1
Bottom View
D
S
C
2
V
1
D
= 25 °C.
DS
- 20
G
20
2
1
(V)
S
®
2
1
G
0.100 at V
0.120 at V
0.156 at V
0.036 at V
0.041 at V
0.050 at V
2
Ordering Information:
R
J
DS(on)
N- and P-Channel 20 V (D-S) MOSFET
= 150 °C)
b, f
Marking Code
GS
GS
GS
GS
GS
GS
EH XXX
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
Part # Code
Lot Traceability
and Date Code
I
D
Si5515CDC-T1-E3
Si5515CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
- 3.8
- 4
- 4
4
4
4
(A)
g
g
g
d, e
g
g
a
A
= 25 °C, unless otherwise noted
Q
Steady State
6.5 nC
6.2 nC
T
T
T
T
T
g
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ.)
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
(Lead (Pb)-free)
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Devices
Symbol
Symbol
T
R
R
J
V
V
I
Definition
P
, T
I
DM
thJA
I
thJF
DS
GS
D
S
D
stg
g
Tested
Typ.
®
50
30
N-Channel
N-Channel
Power MOSFETs
4
4
1.7
2.1
1.3
b, c, g
b, c, g
2.6
3.1
2.0
20
20
4
4
G
g
g
b, c
b, c
b, c
1
Max.
N-Channel MOSFET
60
40
- 55 to 150
260
± 8
D
S
1
1
Typ.
77
33
P-Channel
P-Channel
- 3.1
- 2.5
- 1.7
1.3
0.8
- 3.8
- 2.6
- 20
- 10
- 4
Vishay Siliconix
3.1
2.0
b, c
b, c
g
b, c
b, c
b, c
Si5515CDC
Max.
G
95
40
2
P-Channel MOSFET
www.vishay.com
S
D
°C/W
Unit
Unit
2
2
°C
W
V
A
1

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SI5515CDC-T1-E3 Summary of contents

Page 1

... TrenchFET g • 100 % R 6 • Compliant to RoHS Directive 2002/95/ APPLICATIONS g 6 • Load Switch for Portable Devices - 3.8 Lot Traceability and Date Code Si5515CDC-T1-E3 (Lead (Pb)-free) Si5515CDC-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ° ...

Page 2

... Si5515CDC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... 4 GEN g P-Channel t d(off) = 4.2 Ω ≅ GEN ° 4 2 N-Channel 4.8 A, dI/dt = 100 A/µ P-Channel 2.4 A, dI/ 100 A/µ Si5515CDC Vishay Siliconix a Min. Typ. Max. N-Ch 3 Ω Ω Ω Ω N-Ch 2 ...

Page 4

... Si5515CDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.075 0.060 V GS 0.045 0.030 0.015 0.000 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com 1 1 2.5 V ...

Page 5

... S10-0548-Rev. B, 08-Mar- °C J 0.9 1 250 µ 100 125 150 100 Limited DS(on 0 °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si5515CDC Vishay Siliconix 0. 0. 0.04 0. °C J 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Time (s) Single Pulse Power 100 µ ...

Page 6

... Si5515CDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Document Number: 68747 S10-0548-Rev. B, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5515CDC Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...

Page 8

... Si5515CDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.08 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 3 Total Gate Charge (nC) g Gate Charge www.vishay.com 1 900 750 600 = 2.5 V 450 ...

Page 9

... I = 250 µ 100 125 150 100 Limited DS(on 0 °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si5515CDC Vishay Siliconix 0. 3 0.15 0. °C J 0.06 0.03 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 10

... Si5515CDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68747. Document Number: 68747 S10-0548-Rev. B, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5515CDC Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 °C/W ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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