SI5515CDC-T1-E3 Vishay, SI5515CDC-T1-E3 Datasheet
SI5515CDC-T1-E3
Specifications of SI5515CDC-T1-E3
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SI5515CDC-T1-E3 Summary of contents
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... TrenchFET g • 100 % R 6 • Compliant to RoHS Directive 2002/95/ APPLICATIONS g 6 • Load Switch for Portable Devices - 3.8 Lot Traceability and Date Code Si5515CDC-T1-E3 (Lead (Pb)-free) Si5515CDC-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ° ...
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... Si5515CDC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... 4 GEN g P-Channel t d(off) = 4.2 Ω ≅ GEN ° 4 2 N-Channel 4.8 A, dI/dt = 100 A/µ P-Channel 2.4 A, dI/ 100 A/µ Si5515CDC Vishay Siliconix a Min. Typ. Max. N-Ch 3 Ω Ω Ω Ω N-Ch 2 ...
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... Si5515CDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.075 0.060 V GS 0.045 0.030 0.015 0.000 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com 1 1 2.5 V ...
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... S10-0548-Rev. B, 08-Mar- °C J 0.9 1 250 µ 100 125 150 100 Limited DS(on 0 °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si5515CDC Vishay Siliconix 0. 0. 0.04 0. °C J 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Time (s) Single Pulse Power 100 µ ...
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... Si5515CDC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Document Number: 68747 S10-0548-Rev. B, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5515CDC Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...
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... Si5515CDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.08 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 3 Total Gate Charge (nC) g Gate Charge www.vishay.com 1 900 750 600 = 2.5 V 450 ...
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... I = 250 µ 100 125 150 100 Limited DS(on 0 °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si5515CDC Vishay Siliconix 0. 3 0.15 0. °C J 0.06 0.03 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si5515CDC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68747. Document Number: 68747 S10-0548-Rev. B, 08-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si5515CDC Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 °C/W ...
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