IRF7555PBF International Rectifier, IRF7555PBF Datasheet

IRF7555PBF

Manufacturer Part Number

IRF7555PBF

Description

MOSFET, DUAL, PP, MICRO-8

Manufacturer

International Rectifier

Datasheet

1.IRF7555PBF.pdf (7 pages)

Specifications of IRF7555PBF

Module Configuration

Dual

Transistor Polarity

P Channel

Continuous Drain Current Id

4.3A

Drain Source Voltage Vds

20V

On Resistance Rds(on)

55mohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs

RoHS Compliant

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Description

Absolute Maximum Ratings

Thermal Resistance

New trench HEXFET power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a wide

variety of applications.

The new Micro8 package has half the footprint area of the

standard SO-8. This makes the Micro8 an ideal package for

applications where printed circuit board space is at a premium.

The low profile (<1.1mm) of the Micro8 will allow it to fit easily

into extremely thin application environments such as portable

electronics and PCMCIA cards.

www.irf.com

dv/dt

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Available in Tape & Reel

Trench Technology

Low Profile (<1.1mm)

@ T

, T

STG

= 25°C

= 70°C

= 25°C

= 70°C

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Parameter

Maximum Junction-to-Ambient

Linear Derating Factor

Soldering Temperature, for 10 seconds

Single Pulse Avalanche Energy„

Gate-to-Source Voltage

Parameter

‚

„

@ -4.5V

Max.

G 2

G 1

S 1

T o p V ie w

HEXFET

240 (1.6mm from case)

-55 to + 150

D 1

D 2

100

Max.

Micro8

1.25

-4.3

-3.4

Units

-20

-34

0.8

1.1

± 12

IRF7555

Power MOSFET

DS(on)

DSS

= 0.055

PD -91865B

= -20V

mW/°C

Units

V/ns

°C/W

°C

2/2/00

Related parts for IRF7555PBF

IRF7555PBF Summary of contents

Page 1

Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ...

Page 2

IRF7555 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7555PBF International Rectifier, IRF7555PBF Datasheet

IRF7555PBF

Specifications of IRF7555PBF

Related parts for IRF7555PBF

IRF7555PBF Summary of contents

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