IRF614PBF Vishay, IRF614PBF Datasheet - Page 2

• Manufacturer Part Number: IRF614PBF
• Description: N CHANNEL MOSFET, 250V, 2.7A TO-220
• Manufacturer: Vishay

Specifications of IRF614PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.7A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 36000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF614PBF

IRF614, SiHF614
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
V
R
V
R
t
t
R
R
I
C
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
L
L
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
V
V
V
R
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
GS
GS
T
g
J
Reference to 25 °C, I
= 24 , R
= 200 V, V
= 25 °C, I
= 10 V
= 10 V
V
V
V
V
TYP.
V
f = 1.0 MHz, see fig. 5
0.50
TEST CONDITIONS
DD
DS
DS
DS
GS
-
-
= 125 V, I
F
= V
= 250 V, V
= 50 V, I
= 0 V, I
V
= 2.7 A, dI/dt = 100 A/μs
V
V
GS
DS
D
S
GS
GS
GS
= 45, see fig. 10
= 2.7 A, V
= ± 20 V
I
, I
= 25 V,
D
= 0 V,
= 0 V, T
D
D
= 2.7 A, V
see fig. 6 and 13
D
D
= 250 μA
= 250 μA
= 1.6 A
GS
= 2.7 A ,
I
D
D
= 0 V
= 1.6 A
GS
J
= 1 mA
G
G
= 125 °C
DS
b
= 0 V
= 200 V
b
MAX.
D
S
b
D
S
b
3.5
62
-
b
b
MIN.
0.90
250
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0510-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91025
TYP.
0.39
0.64
140
190
9.6
7.0
7.6
7.0
4.5
7.5
42
16
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
250
390
4.0
2.0
8.2
1.8
4.5
2.7
8.0
2.0
1.3
S
25
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns

V
V
S
A
V