IRFBE20PBF Vishay, IRFBE20PBF Datasheet - Page 6

N CHANNEL MOSFET, 800V, 1.8A TO-220

IRFBE20PBF

Manufacturer Part Number
IRFBE20PBF
Description
N CHANNEL MOSFET, 800V, 1.8A TO-220
Manufacturer
Vishay
Datasheets

Specifications of IRFBE20PBF

Transistor Polarity
N Channel
Continuous Drain Current Id
1.8A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
6.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
530pF @ 25V
Power - Max
54W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
6.5 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
54000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
27 ns
Rise Time
17 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBE20PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFBE20PBF
Manufacturer:
IR
Quantity:
160
Part Number:
IRFBE20PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFBE20PBF
Quantity:
15 900
Company:
Part Number:
IRFBE20PBF
Quantity:
70 000
Company:
Part Number:
IRFBE20PBF
Quantity:
10 000
IRFBE20, SiHFBE20
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S11-0516-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91117
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS

Related parts for IRFBE20PBF