IRFBF30PBF Vishay, IRFBF30PBF Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IRFBF30PBF
Manufacturer Part Number
IRFBF30PBF
Description
N CHANNEL MOSFET, 900V, 3.6A TO-220
Specifications of IRFBF30PBF
Transistor Polarity
N Channel
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
3.7ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.7 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Gate Charge Qg
78 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3.7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2.3 S
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.6 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
3.7Ohm
Drain-source On-volt
900V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFBF30PBF
Available stocks
•
Lead-Free
Document Number: 91122
www.vishay.com
1
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IRFBF30PBF Summary of contents
... Lead-Free Document Number: 91122 www.vishay.com 1 ...
... Document Number: 91122 www.vishay.com 2 ...
... Document Number: 91122 www.vishay.com 3 ...
... Document Number: 91122 www.vishay.com 4 ...
... Document Number: 91122 www.vishay.com 5 ...
... Document Number: 91122 www.vishay.com 6 ...
... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent GS Document Number: 91122 + • • • • G • SD • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ =10V www.vishay.com 7 ...
... LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 2- DRAIN 2- COLLECTOR 3 - SOURCE 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) PAR DAT E CODE 1997 INE C TAC Fax: (310) 252-7903 08/04 www.vishay.com 8 ...
... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...
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