N CHANNEL MOSFET, 1KV, 1.4A, TO-220

IRFBG20PBF

Manufacturer Part NumberIRFBG20PBF
DescriptionN CHANNEL MOSFET, 1KV, 1.4A, TO-220
ManufacturerVishay
IRFBG20PBF datasheets
 


Specifications of IRFBG20PBF

Transistor PolarityN ChannelContinuous Drain Current Id1.4A
Drain Source Voltage Vds1kVOn Resistance Rds(on)11ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs11 Ohm @ 840mA, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C1.4AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs38nC @ 10VInput Capacitance (ciss) @ Vds500pF @ 25V
Power - Max54WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Minimum Operating Temperature- 55 C
ConfigurationSingleResistance Drain-source Rds (on)11 Ohm @ 10 V
Drain-source Breakdown Voltage1000 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current1.4 APower Dissipation54000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFBG20PBF
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220
G
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 193 µH, R
DD
J
≤ 1.4 A, dI/dt ≤ 60 A/µs, V
≤ 600, T
c. I
SD
DD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91123
S-81262-Rev. A, 07-Jul-08
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
1000
• Repetitive Avalanche Rated
11
• Fast Switching
38
• Ease of Paralleling
4.9
• Simple Drive Requirements
22
• Lead (Pb)-free Available
Single
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
The TO-220 package is universially preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
S
acceptance throughout the industry.
N-Channel MOSFET
TO-220
IRFBG20PbF
SiHFBG20-E3
IRFBG20
SiHFBG20
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 1.4 A (see fig. 12).
G
AS
≤ 150 °C.
J
IRFBG20, SiHFBG20
Vishay Siliconix
device
design,
low
on-resistance
SYMBOL
LIMIT
V
1000
DS
V
± 20
GS
1.4
I
D
0.86
I
5.6
DM
0.43
E
200
AS
I
1.4
AR
E
5.4
AR
P
54
D
dV/dt
1.0
T
, T
- 55 to + 150
J
stg
d
300
10
1.1
www.vishay.com
Available
RoHS*
COMPLIANT
and
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N · m
1

IRFBG20PBF Summary of contents

  • Page 1

    ... The TO-220 package is universially preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide S acceptance throughout the industry. N-Channel MOSFET TO-220 IRFBG20PbF SiHFBG20-E3 IRFBG20 SiHFBG20 = 25 °C, unless otherwise noted °C ...

  • Page 2

    ... IRFBG20, SiHFBG20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T Document Number: 91123 S-81262-Rev. A, 07-Jul- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRFBG20, SiHFBG20 Vishay Siliconix www.vishay.com 3 ...

  • Page 4

    ... IRFBG20, SiHFBG20 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91123 S-81262-Rev. A, 07-Jul-08 ...

  • Page 5

    ... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91123 S-81262-Rev. A, 07-Jul- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFBG20, SiHFBG20 Vishay Siliconix D.U. d(on) r d(off www.vishay.com 5 ...

  • Page 6

    ... IRFBG20, SiHFBG20 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91123 ...

  • Page 7

    ... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91123. ...

  • Page 8

    ... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...