NTE2388 NTE ELECTRONICS, NTE2388 Datasheet
NTE2388
Manufacturer Part Number
NTE2388
Description
N CHANNEL MOSFET, 200V, 18A, TO-220
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2388.pdf
(3 pages)
Specifications of NTE2388
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
180mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220
type package designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid, and relay drivers.
Features:
D Silicon Gate for Fast Switching Speeds
D Low r
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I
Total Power Dissipation (T
Maximum Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Case, R
Maximum Thermal Resistance, Junction–to–Ambient, R
Maximum Lead Temperature (During soldering, 1/8” from case for 5sec), T
Continuous
Peak
Derate Above 25 C
DS(on)
T
T
T
C
C
C
= +25 C
= +100 C
= +25 C
to Minimize On–Losses. Specified at Elevated Temperatures.
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
DSS
= 20k ), V
N–Channel Enhancement Mode,
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
DGR
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2388
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . .
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
L
. . . . . . . . . . . .
–55 to +150 C
–55 to +150 C
62.5 C/W
+300 C
1W/ C
1 C/W
125W
200V
200V
20V
18A
72A
11A
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NTE2388 Summary of contents
Page 1
... N–Channel Enhancement Mode, Description: The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Low r to Minimize On– ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Drain–Source Breakdown Voltage Zero–Gate Voltage Drain Current Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse ON Characteristics (Note 1) Gate Threshold Voltage Static Drain–Source On Resistance On–State Drain Current Forward Transconductance Dynamic Characteristics Input ...
Page 3
Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...