IRF9140 International Rectifier, IRF9140 Datasheet

P CH MOSFET, -100V, 18A, TO-204AA

IRF9140

Manufacturer Part Number
IRF9140
Description
P CH MOSFET, -100V, 18A, TO-204AA
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of IRF9140

Transistor Polarity
P Channel
Continuous Drain Current Id
-18A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Transistor Case Style
TO-3
Rohs Compliant
No
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.23Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Continuous Drain Current
18A
Power Dissipation
125W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Package Type
TO-204AA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
THRU-HOLE (TO-204AA/AE)
Product Summary
The HEXFET
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 0V, T C = 25°C
I D @ V GS = 0V, T C = 100°C
www.irf.com
Part Number BVDSS R
IRF9140
P D @ T C = 25°C
T STG
I D M
E AR
dv/dt
E AS
V GS
I AR
T J
technology is the key to International
TRANSISTORS
-100V
0.2Ω
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-18A
I
D
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
11.5(typical)
-55 to 150
100V, P-CHANNEL
12.5
-5.5
125
±20
500
-18
-11
-72
-18
1.0
TO-3
IRF9140
PD - 93976B
Units
W/°C
V/ns
o
mJ
mJ
W
A
A
V
C
g
09/22/03
1

Related parts for IRF9140

IRF9140 Summary of contents

Page 1

... For footnotes refer to the last page www.irf.com I D -18A Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling 300 (0.063 in. (1.6mm) from case for 10s 93976B IRF9140 100V, P-CHANNEL TO-3 Units -18 A -11 -72 125 W 1.0 W/°C ±20 V 500 mJ - ...

Page 2

... IRF9140 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF9140 3 ...

Page 4

... IRF9140 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com 13 a& b ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com D.U. Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit d(on) r d(off 10% 90 Fig 10b. Switching Time Waveforms IRF9140 - ...

Page 6

... IRF9140 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy V (BR)DSS Fig 13b. Gate Charge Test Circuit Vs. Drain Current Current Regulator Same Type as D.U.T. ...

Page 7

... I SD ≤ -18A, di/dt ≤ -100A/µ ≤ -100V ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/03 IRF9140 TAC Fax: (310) 252-7903 7 ...

Related keywords