IRF9140 International Rectifier, IRF9140 Datasheet - Page 2

• Manufacturer Part Number: IRF9140
• Description: P CH MOSFET, -100V, 18A, TO-204AA
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF9140

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -18A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Transistor Case Style: TO-3
• Rohs Compliant: No
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.23Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 18A
• Power Dissipation: 125W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Package Type: TO-204AA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Thermal Resistance
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
IRF9140
C iss
BV DSS
∆BV DSS /∆T J
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C oss
C rss
R thJC
R thJA
I S
I SM
V SD
t rr
Q RR
t on
(on)
(off)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-Ambient
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
-100
Min
-2.0
6.2
3.7
7.0
—
—
—
—
—
—
—
31
—
—
—
—
—
—
—
—
—
—
170
—
—
—
—
-0.087
1400
Typ Max Units
600
200
1.0
6.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
30
-5.0
280
-18
-72
3.6
0.23
-250
-100
35.2
-4.0
°C/W
100
0.2
-25
60
13
35
85
85
65
—
—
—
—
—
—
n S
µC
V
A
V/°C
S ( )
nH
nA
ns
µA
nC
pF
Ω
V
V
Soldered to a 2” square copper-clad board
Ω
T j = 25°C, I F = -18A, di/dt ≤ -100A/µs
T
j
= 25°C, I S =-18A, V GS = 0V
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
Reference to 25°C, I D = -1.0mA
V DS > -15V, I DS = -11A
V GS = -10V, I D = -11A
V GS =-10V, I D = -18A
V DS = V GS , I D = -250µA
Test Conditions
Test Conditions
V GS = 0V, I D = -1.0mA
V GS =-10V, R G = 9.1Ω
V DD = -50V, I D = -18A,
V GS =-10V, ID = -18A
V GS = 0V, V DS = -25V
V GS = 0V, T J = 125°C
Test Conditions
V DS = -80V, V GS =0V
V DD ≤ -50V
V DS = -80V
V GS = -20V
f = 1.0MHz
V DS = -50V
V GS = 20V
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