IRF7606PBF International Rectifier, IRF7606PBF Datasheet
IRF7606PBF
Specifications of IRF7606PBF
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IRF7606PBF Summary of contents
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... Available in Tape & Reel l l Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse ...
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VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 20µs PULSE WIDTH -3. 25° 0 Drain-to-Source Voltage (V) DS Fig 1. ...
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I = -2.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.14 0.12 0.10 0.08 0.06 0.04 2 Fig 7. Typical On-Resistance ...
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1MHz iss rss oss ds gd 800 C iss 600 C oss 400 C rss ...
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Package Outline Micro8 Outline Dimensions are shown in millimeters (inches 0.25 (.010 ...
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Micro8 Part Marking Information (Old) Note: This part marking information applies to devices produced before 2/26/2001. EXAMPLE : THIS IS AN IRF7501 PART NUMBER Micro8 Part Marking Information (New) Note: This part marking information applies to devices produced after 2/26/2001. ...
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Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. (12.992) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. ...