IRF7606PBF International Rectifier, IRF7606PBF Datasheet - Page 2
IRF7606PBF
Manufacturer Part Number
IRF7606PBF
Description
MOSFET, P, MICRO-8
Manufacturer
International Rectifier
Datasheet
1.IRF7606TR.pdf
(8 pages)
Specifications of IRF7606PBF
Transistor Polarity
P Channel
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
90mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
-20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
d(on)
d(off)
f
r
S
DSS
SM
rr
V
fs
GSS
2
(BR)DSS
GS(th)
iss
oss
SD
g
gs
gd
rss
DS(on)
Repetitive rating; pulse width limited by
I
rr
T
(BR)DSS
max. junction temperature. ( See fig. 10 )
SD
J
150°C
-2.4A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
-130A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
––– -0.024 –––
––– 0.075 0.09
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
–––
–––
–––
2.3
10sec.
Surface mounted on FR-4 board, t
140
–––
–––
–––
–––
–––
––– -100
–––
520
300
Pulse width
–––
2.1
7.6
20
13
20
43
39
43
50
0.15
-1.0
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
-1.2
-25
3.1
-29
30
11
64
76
V/°C
nC
pF
nC
ns
300µs; duty cycle
V
V
S
V
ƒ = 1.0MHz, See Fig. 8
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
J
J
= -2.4A
= -2.4A
= 25°C, I
= 25°C, I
= 6.0
= 4.0
= V
= -10V, I
= -24V, V
= -24V, V
= -24V
= 0V
= -25V
= 0V, I
= - 10V, I
= -4.5V, I
= -20V
= 20V
= -10V, See Fig. 9
= -10V
GS
Conditions
, I
D
S
F
D
= 250µA
D
Conditions
= -2.4A, V
= -2.4A
D
D
GS
GS
= -250µA
2%.
= -1.2A
= -2.4A
= -1.2A
= 0V
= 0V, T
www.irf.com
D
= -1mA
GS
J
= 125°C
= 0V
G
D
S