IRF820A Vishay, IRF820A Datasheet
IRF820A
Specifications of IRF820A
Available stocks
Related parts for IRF820A
IRF820A Summary of contents
Page 1
... C SYMBOL ° 100 ° °C C dV/dt T for screw = 2.5 A (see fig. 12). AS ≤ 150 °C. J This datasheet is subject to change without notice. IRF820A, SiHF820A Vishay Siliconix Results in Simple Drive g RoHS* COMPLIANT Specified oss LIMIT UNIT V 500 ± 2 1 ...
Page 2
... IRF820A, SiHF820A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... C 3.0 2.5 2.0 1.5 1.0 4.5 V 0.5 150 °C 0 91057_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF820A, SiHF820A Vishay Siliconix ° 150 C J ° µs Pulse Width 5.0 6.0 7.0 8.0 9.0 ...
Page 4
... IRF820A, SiHF820A Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91057_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 400 250 100 Total Gate Charge (nC) 91057_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
Page 5
... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms - Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF820A, SiHF820A Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
Page 6
... IRF820A, SiHF820A Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 300 250 200 150 100 100 50 Starting T , Junction Temperature (°C) 91057_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current www ...
Page 7
... D • D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For N-Channel This datasheet is subject to change without notice. IRF820A, SiHF820A Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...