IRF820A Vishay, IRF820A Datasheet - Page 4

• Manufacturer Part Number: IRF820A
• Description: N CHANNEL MOSFET, 500V, 2.5A TO-220
• Manufacturer: Vishay

Specifications of IRF820A

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF820A

IRF820A, SiHF820A
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91057_06
91057_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
10
10
20
15
10
10
5
0
1
4
3
2
0
1
I
D
= 2.5 A
V
DS ,
Q
G
V
4
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
10
= 100 V
V
V
C
C
C
DS
GS
iss
rss
oss
= 250 V
8
= C
= 0 V, f = 1 MHz
= C
= C
V
gs
gd
ds
DS
+ C
+ C
10
= 400 V
2
gd
gd
For test circuit
see figure 13
12
, C
This datasheet is subject to change without notice.
ds
Shorted
C
C
C
oss
rss
iss
10
16
3
91057_07
91057_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
0.1
0.1
10
10
1
1
2
0.4
10
T
T
Single Pulse
Fig. 8 - Maximum Safe Operating Area
C
J
= 150 °C
= 25 °C
T
V
V
J
SD
DS
= 150
Operation in this area limited
, Source-to-Drain Voltage (V)
0.6
, Drain-to-Source Voltage (V)
°
10
C
2
by R
T
0.8
J
DS(on)
= 25
S11-0507-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
10
100
1
10
Document Number: 91057
°
ms
C
10
µs
ms
µs
3
1.0
V
GS
= 0 V
10
1.2
4