IRFB18N50K Vishay, IRFB18N50K Datasheet
IRFB18N50K
Specifications of IRFB18N50K
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IRFB18N50K Summary of contents
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... A, dI/dt ≤ 376 A/µs, V ≤ 1.6 mm from case containing terminations are not RoHS compliant, exemptions may apply Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 IRFB18N50K, SiHFB18N50K Power MOSFET FEATURES • Low Gate Charge Q 500 Requirement 0.26 • Improved Gate, Avalanche and Dynamic dV/dt 120 Ruggedness 34 • ...
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... IRFB18N50K, SiHFB18N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER a Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface a Maximum Junction-to-Case (Drain) Note measured at T approximately 90 ° SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current ...
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... BOTTOM 5.0V 1 0.1 20µs PULSE WIDTH Tj = 150°C 0.01 0 Drain-to-Source Voltage (V) Fig Typical Output Characteristics Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 IRFB18N50K, SiHFB18N50K 100.00 10.00 1.00 5.0V 0.10 0.01 10 100 3.0 2.5 2.0 5.0V 1.5 1.0 0.5 0.0 ...
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... IRFB18N50K, SiHFB18N50K Vishay Siliconix 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 17A 400V 250V 100V Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 SHORTED 100 1000 Fig Typical Source-Drain Diode Forward Voltage ...
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... RESPONSE) 0.01 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 IRFB18N50K, SiHFB18N50K 125 150 ° 0.001 0. Rectangular Pulse Duration (sec Driver + - Vishay Siliconix D.U.T. ...
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... IRFB18N50K, SiHFB18N50K Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 750 TOP 600 BOTTOM 450 300 150 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D 7.6A 11A 17A 125 150 ° Current regulator Same type as D.U.T. ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91100. Document Number: 91100 S09-0015-Rev. A, 19-Jan-09 IRFB18N50K, SiHFB18N50K Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...