IRFB18N50K Vishay, IRFB18N50K Datasheet - Page 6

• Manufacturer Part Number: IRFB18N50K
• Description: N CHANNEL MOSFET, 500V, 17A, TO-220
• Manufacturer: Vishay

Specifications of IRFB18N50K

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFB18N50K

IRFB18N50K, SiHFB18N50K
Vishay Siliconix
www.vishay.com
6
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
750
600
450
300
150
0
25
Starting T , Junction Temperature ( C)
50
J
75
100
TOP
BOTTOM
125
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
7.6A
I D
11A
17A
°
Current regulator
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S09-0015-Rev. A, 19-Jan-09
Document Number: 91100
D.U.T.
I
D
+
-
V
DS