IRFBC40LC Vishay, IRFBC40LC Datasheet - Page 3

• Manufacturer Part Number: IRFBC40LC
• Description: N CHANNEL MOSFET, 600V, 6.2A TO-220
• Manufacturer: Vishay

Specifications of IRFBC40LC

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFBC40LC

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91114
S11-0515-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91114_01
91114_02
Fig. 2 - Typical Output Characteristics, T
10
10
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
-1
-2
-1
-2
1
0
1
0
10
10
-2
-2
Top
Bottom
Top
Bottom
V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
10
10
V
, Drain-to-Source Voltage (V)
GS
GS
Drain-to-Source Voltage (V)
-1
-1
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
This datasheet is subject to change without notice.
C
C
4.5 V
4.5 V
= 150 °C
= 25 °C
10
10
2
2
91114_03
91114_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
-1
1
0
- 60 - 40 - 20 0
4
IRFBC40LC, SiHFBC40LC
I
V
Fig. 3 - Typical Transfer Characteristics
D
GS
150
= 6.2 A
= 10 V
°
V
5
C
T
GS ,
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
C
6
20 40 60 80 100 120 140 160
7
www.vishay.com/doc?91000
20 µs Pulse Width
V
Vishay Siliconix
DS
8
=
100 V
9
www.vishay.com
10
3