IRFBC40LC Vishay, IRFBC40LC Datasheet - Page 4

• Manufacturer Part Number: IRFBC40LC
• Description: N CHANNEL MOSFET, 600V, 6.2A TO-220
• Manufacturer: Vishay

Specifications of IRFBC40LC

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFBC40LC

IRFBC40LC, SiHFBC40LC
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91114_05
91114_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2400
2000
1600
1200
800
400
20
16
12
0
8
4
0
10
0
0
I
D
= 5.2 A
V
DS ,
8
Q
Drain-to-Source Voltage (V)
G
, Total Gate Charge (nC)
V
DS
= 180 V
16
C
C
C
V
C
C
C
iss
oss
rss
GS
iss
rss
oss
V
= 0 V, f = 1 MHz
= C
= C
DS
= C
10
= 240 V
gs
gd
ds
24
1
+ C
+ C
V
gd
DS
gd
, C
For test circuit
see figure 13
= 300 V
ds
32
This datasheet is subject to change without notice.
Shorted
40
91114_07
91114_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0.1
10
-2
1
0
3
2
1
5
2
5
2
5
2
5
2
5
2
0.6
0.1
Fig. 8 - Maximum Safe Operating Area
150
2
V
°
5
V
C
SD
DS
1
Operation in this area limited
0.8
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
2
25
5
°
T
T
Single Pulse
C
10
C
J
by R
= 150 °C
= 25 °C
2
1.0
DS(on)
5
10
S11-0515-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
2
Document Number: 91114
2
1.2
5
10
100
10
10
V
1
GS
ms
3
ms
µs
2
µs
= 0 V
5
1.4
10
4