IRLR024TRLPBF Vishay, IRLR024TRLPBF Datasheet

N CHANNEL MOSFET, 60V, 14A, D-PAK

IRLR024TRLPBF

Manufacturer Part Number
IRLR024TRLPBF
Description
N CHANNEL MOSFET, 60V, 14A, D-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRLR024TRLPBF

Transistor Polarity
N Channel
Continuous Drain Current Id
14A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
5V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLR024TRLPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91322
S-82993-Rev. B, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(TO-252)
D
(Max.) (nC)
(nC)
(nC)
DPAK
(V)
≤ 17 A, dI/dt ≤ 140 A/µs, V
= 25 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 541 µH, R
G
c
D S
DD
b
V
GS
≤ V
DPAK (TO-252)
IRLR024PbF
SiHLR024-E3
IRLR024
SiHLR024
e
= 5.0 V
DS
G
, T
e
N-Channel MOSFET
J
Single
≤ 150 °C.
4.5
60
18
12
G
= 25 Ω, I
D
S
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.10
IRLR024, IRLU024, SiHLR024, SiHLU024
GS
AS
at 5.0 V
= 14 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
DPAK (TO-252)
IRLR024TRPbF
SiHLR024T-E3
IRLR024TR
SiHLR024T
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRLR024/SiHLR024)
• Straight Lead (IRLU024/SiHLU024)
• Available in Tape and Reel
• Logic-Level Gate Drive
• R
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU/SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
DS(on)
a
a
Specified at V
SYMBOL
a
T
a
dV/dt
J
V
V
E
I
P
, T
device
I
DM
DS
GS
AS
D
D
stg
design,
GS
= 4 V and 5 V
- 55 to + 150
IPAK (TO-251)
IRLU024PbF
SiHLU024-E3
IRLU024
SiHLU024
LIMIT
0.020
260
± 10
0.33
9.2
2.5
4.5
60
14
56
91
42
low
d
Vishay Siliconix
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

Related parts for IRLR024TRLPBF

IRLR024TRLPBF Summary of contents

Page 1

... R DS(on) • Fast Switching D • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. The straight ...

Page 2

... IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91322 S-82993-Rev. B, 19-Jan-09 IRLR024, IRLU024, SiHLR024, SiHLU024 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91322 S-82993-Rev. B, 19-Jan-09 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91322 S-82993-Rev. B, 19-Jan-09 IRLR024, IRLU024, SiHLR024, SiHLU024 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...

Page 6

... IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91322. Document Number: 91322 S-82993-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords