SI3805DV-T1-E3 Vishay, SI3805DV-T1-E3 Datasheet
SI3805DV-T1-E3
Specifications of SI3805DV-T1-E3
Related parts for SI3805DV-T1-E3
SI3805DV-T1-E3 Summary of contents
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... N Ordering Information: Si3805DV-T1-E3 (Lead (Pb)-free) Si3805DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Average Forward Current (Schottky) ...
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... Si3805DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Foot (Drain) (MOSFET Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Foot (Drain) (Schottky) Notes: a. Based ° Surface Mounted on 1" x 1" FR4 board Maximum under Steady State conditions is 150 °C/W. e. Maximum under Steady State conditions is 155 °C/W. ...
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... A, dI/dt = 100 A/µ °C, unless otherwise noted J Symbol Test Conditions 125 ° ° ° 125 ° Si3805DV Vishay Siliconix Min. Typ. Max 0. ° Min. Typ. Max. 0.42 0.50 0.36 0.43 0.015 0.08 0.50 5.00 0.02 0.10 0.7 7. www.vishay.com Unit Unit ...
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... Si3805DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS thru Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 0.0 1.5 3.0 4 Total Gate Charge (nC) g Gate Charge www.vishay.com °C, unless otherwise noted A 2.0 1.6 ...
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... °C BVDSS A Single Pulse Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Case Si3805DV Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 100 www.vishay.com ...
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... Si3805DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. www.vishay.com °C, unless otherwise noted A 2 ...
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... Single Pulse 0. Document Number: 68912 S09-2110-Rev. B, 12-Oct- °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3805DV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 130 °C/W thJA ( thJA 4 ...
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... Si3805DV Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS Junction Temperature (°C) J Reverse Current vs. Junction Temperature 250 200 150 100 Drain-to-Source Voltage (V) DS Capacitance www.vishay.com °C, unless otherwise noted 0.1 0.01 0.001 75 100 125 150 0 150 ° °C J 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68912. Document Number: 68912 S09-2110-Rev. B, 12-Oct- °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3805DV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 132 °C/W thJA (t) 3 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...