NTE5351 NTE ELECTRONICS, NTE5351 Datasheet

NTE5351

Manufacturer Part Number

NTE5351

Description

SILICON CONTROLLED RECTIFIER,600V V(DRM),5A I(T),TO-66

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE5351.pdf (2 pages)

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Features:

D Fast Turn–Off Time

D High di/dt and dv/dt Capabilities

D Shorted–Emitter Gate–Cathode Construction

D Center Gate Construction

Non–Repetitive Peak Reverse Voltage (Gate Open, Note 1), V

Non–Repetitive Peak Off–State Voltage (Gate Open, Note 1), V

Repetitive Peak Reverse Voltage (Gate Open, Note 1), V

Repetitive Peak Off–State Voltage (Gate Open, Note 1), V

RMS On–State Current (T

Average On–State Current (T

Peak Surge (Non–Repetitive) On–State Current, I

Rate of Change of On–State Current (V

Fusing Current (T

Peak Forward Gate Power Dissipation (10 s Max, Note 2), P

Peak Reverse Gate Power Dissipation (10 s Max, Note 2), P

Average Gate Power Dissipation (10 s Max, Note 2), P

Operating Case Temperature Range, T

Storage Temperature Range, T

Thermal Resistance, Junction–to–Case, R

Thermal Resistance, Junction–to–Ambient, R

Lead Temperature (During Soldering, 1/32” from seating plane, 10sec max), T

Note 1. These values do not apply if there is a positive gate signal. Gate must be negatively biased.

Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum

is permitted.

60Hz (Sinusoidal)

50Hz (Sinusoidal)

= +60 C, for one full cycle at applied voltage)

= –40 to +100 C, t = 1 to 8.3ms), I

Silicon Controlled Rectifier (SCR)

= +60 C, 180 conduction angle), I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

for High Speed Switching

stg

= +60 C, 180 conduction angle), I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 600V, I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJC

NTE5351

thJA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TSM

= 50mA, t = 1 to 8.3ms), di/dt

G(AV)

RROM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DROM

. . . . . . . . . . . . . . . . . . . . . . . . . . . .

RGM

RSOM

T(RMS)

. . . . . . . . . . . . . . . . . . . . . . . . . .

DSOM

. . . . . . . . . . . . . . . . . . . . . . . . .

T(AV)

. . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . .

. . . . . . . . .

–40 to +100 C

–40 to +150 C

. . . . .

200A/ s

40 C/W

+225 C

8 C/W

700V

600V

0.5W

5.0A

3.2A

80A

65A

25A

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NTE5351 Summary of contents

Page 1

... Note 1. These values do not apply if there is a positive gate signal. Gate must be negatively biased. Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted. NTE5351 for High Speed Switching = +60 C, 180 conduction angle), I ...

Page 2

Electrical Characteristics: (At “Maximum Ratings” and T Parameter Peak Off–State Forward Current Peak Off–State Reverse Current Instantaneous On–State Voltage Instantaneous Holding Current Critical Rate of Rise of Off–State Current DC Gate Trigger Current DC Gate Trigger Voltage Gate Controlled Turn–On ...

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