NTE5360 NTE ELECTRONICS, NTE5360 Datasheet
NTE5360
Manufacturer Part Number
NTE5360
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),35A I(T),TO-208AA
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5360.pdf
(2 pages)
Absolute Maximum Ratings and Electrical Characteristics:
Repetitive Peak Off State Voltage (Gate Open, T
Repetitive Peak Reverse Voltage (Gate Open, T
RMS On−State Current (T
Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50 or 60Hz), I
Peak Gate Trigger Current (3µs Max), I
Peak Gate Power (I
Average Gate Power Dissipation, P
Maximum Repetitive Peak Off−State Current (At V
Maximum Repetitive Peak Reverse Current (At V
Maximum Peak On−State Voltage (T
Maximum DC Holding Current (Gate Open, T
Critical Rate of Rise of Off−State Voltage (Gate Open, T
Maximum DC Gate Trigger Current (V
Maximum DC Gate Trigger Voltage (V
gate Controlled Turn−On Time (For t
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction−to−Case, R
GT
≤ I
Silicon Controlled Rectifier (SCR)
GTM
C
= +80°C, 360° Conduction Angle), I
), P
stg
GM
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
d
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
A
and t
= +25°C, I
GTM
= 12V, R
= 12V, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5360
r
, I
35 Amp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
GT
= +25°C), I
J
L
L
= 150mA, T
J
T
RRM
= +110°C), V
= 60Ω, T
= 60Ω, T
thJC
= +110°C), V
DRM
= 40A), V
, T
, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
C
= +110°C), I
= +110°C), dv/dt
H
C
C
= +110°C), I
TM
C
= +25°C), I
= +25°C), V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C), t
RRM
DRM
T(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . .
RRM
DRM
. . . . . . . . . . . . . . . . . . . .
GT
GT
gt
. . . . . . . . . . . . . . .
TSM
. . . . . . . . . . . . . .
. . . . . . . . . . . .
. . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
. . . . . . . . . . .
−40° to +150°C
−40° to +150°C
200V/µs
1.4°C/W
500mW
1.0mA
1.0mA
50mA
25mA
2.5µs
600V
600V
400A
20W
1.6V
2.0V
40A
2A
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NTE5360 Summary of contents
Page 1
... Critical Rate of Rise of Off−State Voltage (Gate Open, T Maximum DC Gate Trigger Current (V Maximum DC Gate Trigger Voltage (V gate Controlled Turn−On Time (For t Operating Temperature Range, T Storage Temperature Range, T Typical Thermal Resistance, Junction−to−Case, R NTE5360 35 Amp = +110°C +110°C +80°C, 360° Conduction Angle), I ...
Page 2
Max Gate 1.193 (30.33) Max .453 (11.5) Max Cathode .200 (5.08) Max Anode 1/4−28 UNF−2A ...