NTE5369 NTE ELECTRONICS, NTE5369 Datasheet
NTE5369
Manufacturer Part Number
NTE5369
Description
SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),125A I(T),TO-208AD
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5369.pdf
(2 pages)
Absolute Maximum Ratings: (T
Repetitive Peak Voltages, V
Non−Repetitive Peak Reverse Blocking Voltage, V
Average On−State Current (Half Sine Wave, T
RMS On−State Current, I
Continuous On−State Current, I
Peak One−Cycle Surge (10ms duration, 60% V
Non−Repetitive On−State Current (10ms duration, V
Maximum Permissible Surge Energy (V
Peak Forward Gate Current (Anode positive with respect to cathode), I
Peak Forward Gate Voltage (Anode positive with respect to cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
Peak Gate Power (100μs pulse width), P
Rate of Rise of Off−State Voltage (To 80% V
Rate of Rise of On−State Current, di/dt
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Peak On−State Voltage (I
Forward Conduction Threshold Voltage, V
Forward Conduction Slope Resistance, r
Repetitive Peak Off−State Current (At V
Repetitive Peak Reverse Current (At V
10ms duration
3ms duration
(Gate drive 20V, 20Ω with t
(For a device with a maximum forward voltage drop characteristic)
Repetitive
Non−Repetitive
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
Silicon Controlled Rectifier (SCR)
T(RMS)
TM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
= 280A), V
for High Speed Switching,
RGM
stg
T
, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hs
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
r
DRM
≤ 1μs, anode voltage ≤ 80% V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +125°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125 Amp, TO83
RRM
, V
R
TM
DRM
GM
≤ 10V), I
DSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
O
thJC
NTE5369
), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
DRM
RRM
= +85°C), I
gate open−circuit), dv/dt
2
RSM
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
re−applied), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
≤ 10V), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T(AV)
TSM (2)
. . . . . . . . . . . . . . . . . . . . . . . . . .
TSM (1)
DRM
)
. . . . . . . . . . . . . . . . . . .
FGM
FGM
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
. . . . . . . . . . . .
. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . .
−40° to +125°C
−40° to +150°C
13600A
10000A
0.23°C/W
1000A/μs
200V/μs
500A/μs
1200V
1300V
1500A
1650A
2.54V
20mA
20mA
175A
175A
1.5W
3mΩ
60W
1.7V
75A
14A
20V
5V
2
2
s
s
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NTE5369 Summary of contents
Page 1
... Peak On−State Voltage (I TM Forward Conduction Threshold Voltage, V Forward Conduction Slope Resistance, r Repetitive Peak Off−State Current (At V Repetitive Peak Reverse Current (At V NTE5369 for High Speed Switching, 125 Amp, TO83 = +125°C unless otherwise specified ...
Page 2
Maximum Gate Current (V A Maximum Gate Voltage (V A Maximum Holding Current (V Maximum Gate Voltage Which Will Not Trigger Any Device, V Typical Stored Charge (I TM Circuit Commutated Turn−Off Time (I (200V/μs to 80% V DRM (20V/μs ...