NTE5386 NTE ELECTRONICS, NTE5386 Datasheet
NTE5386
Manufacturer Part Number
NTE5386
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),700A I(T),TO-200var58
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5386.pdf
(2 pages)
Maximum Ratings and Electrical Characteristics: (T
Repetitive Peak Voltages, V
Non−Repetitive Peak Off−State Voltage, V
Non−Repetitive Peak Reverse Blocking Voltage, V
Average On−State Current, I
RMS On−State Current (+25°C heatsink temperature, double side cooled), I
Continuous On−State Current (+25°C heatsink temperature, double side cooled), I
Peak One−Cycle Surge (Non−Repetitive) On−State Current, I
Maximum Permissible Surge Energy (V
Peak Forward Gate Current (Anode Positive with Respect to Cathode), I
Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), V
Peak Reverse Gate Voltage, V
Average Gate Power, P
Peak Gate Power (100μs Pulse Width), P
Rate of Rise of Off−State Voltage (To 80% V
Rate of Rise of On−State Current, di/dt
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Heatsink, R
NTE5386
NTE5387
NTE5386
NTE5387
NTE5386
NTE5387
(+55°C heatsink temperature, double side cooled)
(+85°C heatsink temperature, single side cooled)
(t = 10ms, 60% V
(t = 10ms, V
(t = 10ms)
(t = 3ms)
(Gate Drive 20V, 20Ω with t
Double Side Cooled
Single Side Cooled
Repetitive
Non−Repetitive
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
≤ 10V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
RRM
Silicon Controlled Rectifier (SCR)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T(AV)
re−applied)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
for High Speed Switching,
RGM
stg
, V
C
r
NTE5386 & NTE5387
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
700 Amp, TO200AC
≤ 1μs, Anode voltage ≤ 80% V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
≤ 10V), I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DSM
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJHS
, Gate Open−Circuit), dv/dt
2
RSM
t
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +125°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TSM
DRM
)
FGM
FGM
T(RMS)
. . . . . . . . . . . . . . .
. . . . . . . . . . .
. . . . . . . . . . . . . .
T
−40° to +125°C
−40° to +150°C
. . . . . . .
546000A
400000A
. . . . . .
0.047°C/W
0.094°C/W
1000A/μs
200V/μs
500A/μs
10450A
1200V
1200V
1300V
1535A
9500A
1180A
120W
600V
600V
700V
745A
261A
2
2
20A
23V
sec
sec
4W
5V
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NTE5386 Summary of contents
Page 1
... Operating Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction−to−Heatsink, R Double Side Cooled Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5386 & NTE5387 for High Speed Switching, 700 Amp, TO200AC , V DRM RRM DSM ...
Page 2
Maximum Ratings and Electrical Characteristics (Cont’d): (T Peak On−State Voltage (I TM Forward Conduction Threshold Voltage, V Forward Conduction Slope Resistance, r Repetitive Peak Off−State Current (At Rated V Repetitive Peak Reverse Current (At Rated V Maximum Gate Current Required ...