NTE5410 NTE ELECTRONICS, NTE5410 Datasheet
NTE5410
Manufacturer Part Number
NTE5410
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),3A I(T),TO-5
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5409.pdf
(2 pages)
Specifications of NTE5410
Rohs Compliant
YES
Description:
The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and
MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermeti-
cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with
a gate current of 200 A.
These NTE SCRs are reverse–blocking triode thyristors and may be switched from off–state to con-
duction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed
for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (T
Repetitive Peak Off–State Voltage (T
RMS On–State Current (T
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), I
Peak Gate–Trigger Current (3 s Max), I
Peak Gate–Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Case, R
NTE5408
NTE5409
NTE5410
NTE5408
NTE5409
NTE5410
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
C
= +75 C, Conduction Angle of 180 ), I
stg
GT
NTE5408 thru NTE5410
opr
3 Amp Sensitive Gate
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
C
C
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GTM
= +100 C), V
= +100 C), V
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
for 3 s Max), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
RRM
DRXM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
T(RMS)
. . . . . . . . . . . . . . . . . . .
TSM
. . . . . . . . . . .
–40 to +100 C
–40 to +150 C
+5 C/W
200mW
200V
400V
600V
200V
400V
600V
20W
40A
4A
1A
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NTE5410 Summary of contents
Page 1
... Silicon Controlled Rectifier (SCR) Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermeti- cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with a gate current of 200 A. These NTE SCRs are reverse– ...
Page 2
Electrical Characteristics: (T Parameter Peak Off–State Current Maximum On–State Voltage DC Holding Current DC Gate–Trigger Current DC Gate–Trigger Voltage Gate Controlled Turn–On Time for Fusing Reference Critical Rate of Applied Forward Voltage = +25 C unless otherwise ...