NTE5416 NTE ELECTRONICS, NTE5416 Datasheet
NTE5416
Manufacturer Part Number
NTE5416
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),4A I(T),TO-126
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5411.pdf
(3 pages)
Specifications of NTE5416
Rohs Compliant
YES
Description:
The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for
high volume consumer applications such as temperature, light, and speed control: process and re-
mote control, and warning systems where reliability of operation is important.
Features:
D Passivated Surface for Reliability and Uniformity
D Power Rated at Economical Prices
D Practical Level Triggering and Holding Characteristics
Absolute Maximum Ratings: (T
Repetitive Peak Forward and Reverse Blocking Voltage, V
(1/2 Sine Wave, R
Non–Repetitive Peak Reverse Blocking Voltage , V
(1/2 Sine Wave, R
Average On–State Current, I
Surge On–State Current (T
Circuit Fusing (t = 8.3ms), I
Peak Gate Power (Pulse Width = 10 s, T
Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias ap-
NTE5411
NTE5412
NTE5413
NTE5414
NTE5415
NTE5416
NTE5411
NTE5412
NTE5413
NTE5414
NTE5415
NTE5416
T
T
1/2 Sine wave, 60Hz
1/2 Sine wave, 1.5ms
C
C
plied to the gate concurrently with a negative potential on the anode. Devices should not
be tested with a constant current source for forward or reverse blocking capability such that
the voltage applied exceeds the rated blocking voltage.
= –40 to +110 C
= +100 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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GK
GK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1000 , T
= 1000 , T
Silicon Controlled Rectifier (SCR)
C
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t
T(AV)
= +90 C), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5411 thru NTE5416
C
C
4 Amp, Sensitive Gate
C
= –40 to +110 C, Note 1)
= –40 to +110 C)
= +110 C unles otherwise specified)
TSM
C
= +90 C), P
RSM
GM
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, V
RRM
2.6A
100V
200V
400V
600V
100V
100V
150V
250V
450V
650V
0.5W
2.6A
1.6A
30V
60V
25A
35A
2
s
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NTE5416 Summary of contents
Page 1
... Silicon Controlled Rectifier (SCR) Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and re- mote control, and warning systems where reliability of operation is important. Features: D Passivated Surface for Reliability and Uniformity ...
Page 2
Absolute Maximum Ratings (Cont’d): (T Average Gate Power (t = 8.2ms, T Peak Forward Gate Current, I Peak Reverse Gate Voltage, V Operating Junction Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction–to–Case, R Thermal Resistance, Junction–to–Ambient, R Mounting ...
Page 3
Max .450 (11.4) Max .655 (16.6) Max K A .130 (3.3) Max .175 (4.45) Max .118 (3.0) Dia .030 (.762) Dia G .090 (2.28) ...