NTE5458 NTE ELECTRONICS, NTE5458 Datasheet
NTE5458
Manufacturer Part Number
NTE5458
Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),4A I(T),TO-202
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5456.pdf
(2 pages)
Specifications of NTE5458
Rohs Compliant
YES
Description:
The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed
to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be
switched from off–state to conduction by a current pulse applied to the gate terminal. They are de-
signed for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (T
Repetitive Peak Off–State Voltage (T
RMS On–State Current, I
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), I
Peak Gate–Trigger Current (3 s Max), I
Peak Gate–Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Case, R
NTE5452
NTE5453
NTE5454
NTE5455
NTE5456
NTE5457
NTE5458
NTE5452
NTE5453
NTE5454
NTE5455
NTE5456
NTE5457
NTE5458
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Silicon Controlled Rectifier (SCR)
T(RMS)
stg
GT
NTE5452 thru NTE5458
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
opr
4 Amp Sensitive Gate
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
C
C
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GTM
= +100 C), V
= +100 C), V
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
for 3 s Max), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
RRM
DRXM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
TSM
. . . . . . . . . . .
–40 to +100 C
–40 to +150 C
+5 C/W
200mW
100V
200V
300V
400V
600V
100V
200V
300V
400V
600V
20W
30V
50V
30V
50V
20A
4A
1A
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NTE5458 Summary of contents
Page 1
... Silicon Controlled Rectifier (SCR) Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’ TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be switched from off–state to conduction by a current pulse applied to the gate terminal. They are de- signed for control applications in lighting, heating, cooling, and static switching relays ...
Page 2
Electrical Characteristics: Parameter Peak Off–State Current Maximum On–State Voltage DC Holding Current DC Gate–Trigger Current DC Gate–Trigger Voltage Total Gate Controlled Turn–On Time for Fusing Reference Critical rate of Applied Forward Voltage 1.200 (30.48) Ref .100 (2.54) ...