NTE2012 NTE ELECTRONICS, NTE2012 Datasheet

NTE2012

Manufacturer Part Number

NTE2012

Description

DARLINGTON ARRAY, NPN, 7, 50V, DIP

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE2012.pdf (3 pages)

Specifications of NTE2012

Collector Emitter Voltage V(br)ceo

1.3V

Power Dissipation Pd

Dc Collector Current

600mA

Operating Temperature Range

-20Â°C To +85Â°C

No. Of Pins

Continuous Collector Current Ic

600mA

No. Of Transistors

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Description:

The NTE2011 through NTE2015 are high−voltage, high−current Darlington arrays in a 16−Lead DIP type

package and are comprised of seven silicon NPN Darlington pairs on a common monolithic substrate.

All units have open−collector outputs and integral diodes for inductive load transient suppression.

Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are

permissible, making them ideal for driving tungstun filament lamps.

The NTE2011 is a general purpose array that may be used with standard bi−polar digital logic using

external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs

opposite inputs to facilitate printed wiring board layouts.

The NTE2012 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and

resistor in series to limit the input current to a safe value in that application. The Zener diode also gives

this device excellent noise immunity.

The NTE2013 has a 2.7kΩ series base resistor for each Darlington pair, allowing operation directly

with TTL or CMOS operating at a supply voltage of 5V. This device will handle numerous interface

needs − particularly those beyond the capabilities of standard logic buffers.

The NTE2014 has a 10.5kΩ series input resistor that permits operation directly from CMOS or PMOS

outputs utilizing supply voltages of 6V to 15V. The required input current is below that of the NTE2013,

while the required input voltage is less than that required by the NTE2012.

The NTE2015 is designed for use with standard TTL and Schottky TTL, with which higher output cur-

rents are required and loading of the logic output is not a concern. This device will sink a minimum

of 350mA when driven from a “totem pole” logic output.

Absolute Maximum Ratings: (T

Output Voltage, V

Input Voltage, V

Continuous Collector Current. I

Continuous Input Current, I

Power Dissipation, P

Operating Ambient Temperature Range, T

Storage Temperature Range, T

Note 1. The NTE2011 and NTE2015 are discontinued devices and no longer available.

Note 2. Derate at the rate of 16.6mW/°C above +25°C.

Note 3. Under normal operating conditions, these devices will sustain 350mA per output with

NTE2012, NTE2013, NTE2014

NTE2015

NTE2011, NTE2013, NTE2014

NTE2012, NTE2015

One Darlington Pair

Total Device (Note 1)

CE(sat)

NTE2011/NTE2012/NTE2013/NTE2014/NTE2015

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 1.6V at +70°C with a pulse width of 20ms and a duty cycle of 34%.

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7−Channel Darlington Array/Driver

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

= +25°C for any one Darlington pair unless otherwise specified)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Integrated Circuit

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−55° to +150°C

−20° to +85°C

500mA

600mA

25mA

50V

30V

15V

Related parts for NTE2012

NTE2012 Summary of contents

Page 1

... PMOS or CMOS directly. This device is pinned with outputs opposite inputs to facilitate printed wiring board layouts. The NTE2012 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and resistor in series to limit the input current to a safe value in that application. The Zener diode also gives this device excellent noise immunity. The NTE2013 has a 2.7kΩ ...

Page 2

... CEX 50V NTE2012 V = 50V NTE2014 V = 50V 100mA NTE2011 C CE(sat NTE2013 NTE2013 I = 200mA NTE2014 NTE2014 I = 350mA 200mA, I NTE2012 C NTE2015 NTE2015 I = 350mA 500mA NTE2012 V = 17V IN(ON) IN NTE2013 V = 3.85V IN NTE2014 12V IN NTE2015 All I = 500μA, T IN(OFF NTE2012 V = 2V, I IN(ON NTE2013 NTE2014 V = 2V, I ...

Page 3

Pin Connection Diagram Input 1 1 Input 2 2 Input 3 3 Input 4 4 Input 5 5 Input 6 6 Input 7 7 GND .870 (22.0) Max .100 (2.54) .700 (17.78) 16 Output 1 15 Output ...

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