TIP110 MULTICOMP, TIP110 Datasheet

BIPOLAR TRANSISTOR, NPN, 60V TO-220

TIP110

Manufacturer Part Number
TIP110
Description
BIPOLAR TRANSISTOR, NPN, 60V TO-220
Manufacturer
MULTICOMP
Datasheet

Specifications of TIP110

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation Pd
50W
Dc Collector Current
2A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Maximum Ratings
Thermal Characteristics
Thermal Resistance Junction to Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation at T
Operating and Storage Junction
Temperature Range
TIP110, TIP115
Darlington Transistors
Pin 1. Base
Derate above 25°C
2. Collector
3. Emitter
4. Collector (Case)
Characteristic
Characteristic
Peak
C
= 25°C
T
Symbol
Symbol
J
V
V
V
Rθjc
, T
I
P
CEO
CBO
EBO
CM
I
I
Features:
Designed for general-purpose amplifier and low speed switching applications.
Dimension
• • Collector-emitter sustaining voltage-V
• • Collector-emitter saturation voltage-V
• • Monolithic construction with built-in-base-emitter shunt resistor.
C
B
D
STG
M
C
D
G
H
O
A
B
E
F
K
J
L
I
-65 to +150
Maximum
TIP110
TIP115
5.0
2.0
4.0
0.4
2.5
60
50
50
Minimum
14.68
13.06
9.78
5.01
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
Page 1
Dimensions : Millimetres
W/°C
°C/W
Unit
Unit
mA
°C
W
V
A
Maximum
15.31
10.42
14.62
6.52
4.07
3.66
1.36
0.96
4.98
1.38
2.97
0.55
2.98
3.90
CE (sat)
CEO (sus)
= 2.5V (Maximum) at I
= 60V (Minimum) - TIP110, TIP115.
Complementary Silicon
TIP110
Power Transistors
NPN
2.0 Ampere
Darlington
50 Watts
60 Volts
TO-220
TIP115
PNP
C
= 2.0A.
16/03/06 V1.0

Related parts for TIP110

TIP110 Summary of contents

Page 1

... EBO 0.4 W/° -65 to +150 °C J STG Symbol Maximum Unit Rθjc 2.5 °C/W Page 1 = 60V (Minimum) - TIP110, TIP115. CEO (sus) = 2.5V (Maximum 2.0A. CE (sat) C NPN PNP TIP110 TIP115 2.0 Ampere Darlington Complementary Silicon Power Transistors 60 Volts 50 Watts TO-220 16/03/06 V1.0 ...

Page 2

... C CE Output Capacitance (V = 10V 0.1MHz (1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%. = 25°C unless otherwise noted) C Symbol V CEO (sus) TIP110, TIP115 I CEO TIP110, TIP115 I CBO TIP110, TIP115 I EBO hFE V CE (sat (on TIP110 TIP115 Page 2 Minimum Maximum Unit - 2.0 ...

Page 3

... TIP110, TIP115 Darlington Transistors NPN TIP110 Figure - 2 Switching Time I , Collector Current (AMP) C Figure - 4 Capacitances V , Reverse Voltage (Volts) R Internal Schematic Diagram PNP TIP115 Page 3 Figure - 3 Switching Time I , Collector Current (AMP) C Figure - 5 Active Region Safe Operating Area V , Collector Emitter Voltage (Volts) CE 16/03/06 V1.0 ...

Page 4

... TIP110, TIP115 Darlington Transistors Figure - 6 Active Region Safe Operating Area V , Collector Emitter Voltage (Volts) CE Specifications (av) CEO maximum maximum ( There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate ...

Page 5

... TIP110, TIP115 Darlington Transistors Notes: International Sales Offices: AUSTRALIA – Farnell InOne Tel No 9645 8888 Fax No 9644 7898 AUSTRIA – Farnell InOne Tel No 662 2180 680 Fax No 662 2180 670 BELGIUM – Farnell InOne Tel No 475 2810 Fax No 227 3648 BRAZIL – ...

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