TIP110 MULTICOMP, TIP110 Datasheet - Page 2
TIP110
Manufacturer Part Number
TIP110
Description
BIPOLAR TRANSISTOR, NPN, 60V TO-220
Manufacturer
MULTICOMP
Datasheet
1.TIP110.pdf
(5 pages)
Specifications of TIP110
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation Pd
50W
Dc Collector Current
2A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIP110
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
TIP110G
Manufacturer:
ON/安森美
Quantity:
20 000
Electrical Characteristics (T
OFF Characteristics
ON Characteristics (1)
Dynamic Characteristics
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
Collector-Emitter Sustaining Voltage (1)
(I
Collector Cut off Current
(V
Collector Cut off Current
(V
Emitter Cut off Current
(V
DC Current Gain
(I
(I
Collector-Emitter Saturation Voltage
(I
Base-Emitter On Voltage
(I
Small-Signal Current Gain
(I
Output Capacitance
(V
TIP110, TIP115
Darlington Transistors
C
C
C
C
C
C
CE
CB
EB
CB
= 30mA, I
= 1.0A, V
= 2.0A, V
= 2.0A, I
= 2.0A, V
= 0.75A, V
= 60V, I
=5.0V, I
= 30V, I
= 10V, I
B
C
CE
CE
CE
E
B
B
E
= 8.0mA)
CE
= 0)
= 0)
= 0)
= 0)
= 0, f = 0.1MHz)
= 4.0V)
= 4.0V)
= 4.0V)
= 10V, f = 1.0MHz)
Figure - 1 Power Derating
T
Characteristic
C
, Temperature (°C)
TIP110
TIP115
C
= 25°C unless otherwise noted)
TIP110, TIP115
TIP110, TIP115
TIP110, TIP115
Page 2
V
Symbol
V
V
CEO (sus)
CE (sat)
I
I
I
BE (on)
hFE
C
CEO
CBO
EBO
h
ob
fe
Minimum Maximum
1000
500
60
25
-
-
-
-
-
-
250
150
2.0
1.0
2.0
2.5
2.8
-
-
-
Unit
mA
pF
V
V
-
-
16/03/06 V1.0