BIPOLAR TRANSISTOR, NPN, 60V TO-220

TIP31A

Manufacturer Part NumberTIP31A
DescriptionBIPOLAR TRANSISTOR, NPN, 60V TO-220
ManufacturerMULTICOMP
TIP31A datasheet
 

Specifications of TIP31A

Transistor PolarityNPNCollector Emitter Voltage V(br)ceo60V
Transition Frequency Typ Ft3MHzPower Dissipation Pd40W
Dc Collector Current3ADc Current Gain Hfe50
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
Page 1/7

Download datasheet (370Kb)Embed
Next
TIP31, TIP32
High Power Bipolar Transistor
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case).
Features:
• Collector-Emitter sustaining voltage -
V
= 60V (Minimum) - TIP31A, TIP32A
CEO(sus)
= 100V (Minimum) - TIP31C, TIP32C.
• Collector-Emitter saturation voltage -
V
= 1.2V (Maximum) at I
= 3.0A.
CE(sat)
C
• Current gain-bandwidth product f
T
Dimensions
Minimum
Maximum
A
14.68
15.31
B
9.78
10.42
C
5.01
D
13.06
14.62
E
3.57
F
2.42
G
1.12
H
0.72
I
4.22
J
1.14
K
2.20
L
0.33
M
2.48
O
3.70
Dimensions : Millimetres
Page 1
= 3.0MHz (Minimum) at I
= 500mA.
C
NPN
PNP
TIP31A
TIP32A
TIP32C
TIP32C
3 Ampere
6.52
Complementary Silicon
Power Transistors
60 - 100 Volts
4.07
40 Watts
3.66
1.36
0.96
4.98
TO-220
1.38
2.97
0.55
2.98
3.90
31/05/05 V1.0

TIP31A Summary of contents

  • Page 1

    ... TIP31, TIP32 High Power Bipolar Transistor Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). Features: • Collector-Emitter sustaining voltage - V = 60V (Minimum) - TIP31A, TIP32A CEO(sus) = 100V (Minimum) - TIP31C, TIP32C. • Collector-Emitter saturation voltage - V = 1.2V (Maximum 3.0A. CE(sat) C • Current gain-bandwidth product f T Dimensions Minimum Maximum A 14 ...

  • Page 2

    ... Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation 25°C C Derate above 25°C Operation and Storage Junction Temperature Range Thermal Characteristics Characteristic Thermal Resistance Junction to case TIP31A Symbol TIP32A V CEO 60 V CBO V EBO ...

  • Page 3

    ... V = 10V 1kHz (1) Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2.0% ( • TEST = 25°C unless otherwise noted) C Symbol TIP31A, TIP32A V CEO(sus) TIP31C, TIP32C TIP31A, TIP32A I CEO TIP31C, TIP32C TIP31A, TIP32A I CES TIP31C, TIP32C I EBO CE(sat) V BE(on Page 3 Minimum Maximum - 60 100 - 0 ...

  • Page 4

    TIP31, TIP32 High Power Bipolar Transistor Figure - 2 Switching Time Equivalent Circuit Figure - 4 DC Current Gain Figure - 3 Turn-On Time Figure - 5 Turn-Off Time Page 4 31/05/05 V1.0 ...

  • Page 5

    TIP31, TIP32 High Power Bipolar Transistor Figure - 6 Active Region Safe Operating Area Figure - 7 Collector Saturation Region There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating ...

  • Page 6

    ... TIP31, TIP32 High Power Bipolar Transistor Figure - 9 “ON” Voltage Specifications TYPE Part Number TIP31A NPN TIP31C TIP32A PNP TIP32C Figure - 10 Collector Cut-off Region Page 6 31/05/05 V1.0 ...

  • Page 7

    ... Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2004. ...