TIP31A MULTICOMP, TIP31A Datasheet

TIP31A
Manufacturer Part Number	TIP31A
Description	BIPOLAR TRANSISTOR, NPN, 60V TO-220
Manufacturer	MULTICOMP
TIP31A datasheet	1. TIP31A.pdf (7 pages)

Specifications of TIP31A
Transistor Polarity	NPN	Collector Emitter Voltage V(br)ceo	60V
Transition Frequency Typ Ft	3MHz	Power Dissipation Pd	40W
Dc Collector Current	3A	Dc Current Gain Hfe	50
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

Page 1/7

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TIP31, TIP32

High Power Bipolar Transistor

Pin 1. Base

2. Collector

3. Emitter

4. Collector(Case).

Features:

• Collector-Emitter sustaining voltage -

= 60V (Minimum) - TIP31A, TIP32A

CEO(sus)

= 100V (Minimum) - TIP31C, TIP32C.

• Collector-Emitter saturation voltage -

= 1.2V (Maximum) at I

= 3.0A.

CE(sat)

• Current gain-bandwidth product f

Dimensions

Minimum

Maximum

14.68

15.31

9.78

10.42

5.01

13.06

14.62

3.57

2.42

1.12

0.72

4.22

1.14

2.20

0.33

2.48

3.70

Dimensions : Millimetres

Page 1

= 3.0MHz (Minimum) at I

= 500mA.

NPN

PNP

TIP31A

TIP32A

TIP32C

3 Ampere

6.52

Complementary Silicon

Power Transistors

60 - 100 Volts

4.07

40 Watts

3.66

1.36

0.96

4.98

TO-220

1.38

2.97

0.55

2.98

3.90

31/05/05 V1.0

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TIP31A Summary of contents
Page 1 ... TIP31, TIP32 High Power Bipolar Transistor Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). Features: • Collector-Emitter sustaining voltage - V = 60V (Minimum) - TIP31A, TIP32A CEO(sus) = 100V (Minimum) - TIP31C, TIP32C. • Collector-Emitter saturation voltage - V = 1.2V (Maximum 3.0A. CE(sat) C • Current gain-bandwidth product f T Dimensions Minimum Maximum A 14 ... Page 2 ... Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation 25°C C Derate above 25°C Operation and Storage Junction Temperature Range Thermal Characteristics Characteristic Thermal Resistance Junction to case TIP31A Symbol TIP32A V CEO 60 V CBO V EBO ... Page 3 ... V = 10V 1kHz (1) Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2.0% ( • TEST = 25°C unless otherwise noted) C Symbol TIP31A, TIP32A V CEO(sus) TIP31C, TIP32C TIP31A, TIP32A I CEO TIP31C, TIP32C TIP31A, TIP32A I CES TIP31C, TIP32C I EBO CE(sat) V BE(on Page 3 Minimum Maximum - 60 100 - 0 ... Page 4 TIP31, TIP32 High Power Bipolar Transistor Figure - 2 Switching Time Equivalent Circuit Figure - 4 DC Current Gain Figure - 3 Turn-On Time Figure - 5 Turn-Off Time Page 4 31/05/05 V1.0 ... Page 5 TIP31, TIP32 High Power Bipolar Transistor Figure - 6 Active Region Safe Operating Area Figure - 7 Collector Saturation Region There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating ... Page 6 ... TIP31, TIP32 High Power Bipolar Transistor Figure - 9 “ON” Voltage Specifications TYPE Part Number TIP31A NPN TIP31C TIP32A PNP TIP32C Figure - 10 Collector Cut-off Region Page 6 31/05/05 V1.0 ... Page 7 ... Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2004. ...

TIP31A Summary of contents

Page 1
... TIP31, TIP32 High Power Bipolar Transistor Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). Features: • Collector-Emitter sustaining voltage - V = 60V (Minimum) - TIP31A, TIP32A CEO(sus) = 100V (Minimum) - TIP31C, TIP32C. • Collector-Emitter saturation voltage - V = 1.2V (Maximum 3.0A. CE(sat) C • Current gain-bandwidth product f T Dimensions Minimum Maximum A 14 ...
Page 2
... Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation 25°C C Derate above 25°C Operation and Storage Junction Temperature Range Thermal Characteristics Characteristic Thermal Resistance Junction to case TIP31A Symbol TIP32A V CEO 60 V CBO V EBO ...
Page 3
... V = 10V 1kHz (1) Pulse Test: Pulse width ≤300µs, Duty Cycle ≤2.0% ( • TEST = 25°C unless otherwise noted) C Symbol TIP31A, TIP32A V CEO(sus) TIP31C, TIP32C TIP31A, TIP32A I CEO TIP31C, TIP32C TIP31A, TIP32A I CES TIP31C, TIP32C I EBO CE(sat) V BE(on Page 3 Minimum Maximum - 60 100 - 0 ...
Page 4
TIP31, TIP32 High Power Bipolar Transistor Figure - 2 Switching Time Equivalent Circuit Figure - 4 DC Current Gain Figure - 3 Turn-On Time Figure - 5 Turn-Off Time Page 4 31/05/05 V1.0 ...
Page 5
TIP31, TIP32 High Power Bipolar Transistor Figure - 6 Active Region Safe Operating Area Figure - 7 Collector Saturation Region There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating ...
Page 6
... TIP31, TIP32 High Power Bipolar Transistor Figure - 9 “ON” Voltage Specifications TYPE Part Number TIP31A NPN TIP31C TIP32A PNP TIP32C Figure - 10 Collector Cut-off Region Page 6 31/05/05 V1.0 ...
Page 7
... Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2004. ...

TIP31A

TIP31A

Specifications of TIP31A

Related parts for TIP31A

TIP31A Summary of contents

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