NTE213 NTE ELECTRONICS, NTE213 Datasheet
NTE213
Manufacturer Part Number
NTE213
Description
TRANSISTOR,BJT,PNP,65V V(BR)CEO,30A I(C),TO-36
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE213.pdf
(2 pages)
Description:
The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power,
high–gain applications in high–reliability industrial equipment.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Elwectrical Characteristics: (T
Note 1. To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.
OFF Characteristics
Collector–Emitter Breakdown Voltage
Floating Potential
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EB
High Power, High Gain Amplifier
CB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Germanium PNP Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
= +25 C unless otherwise specified)
V
V
Symbol
(BR)CEO
(BR)CES
V
I
I
CBO
EBO
EBF
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE213
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
V
V
V
V
V
V
V
V
C
C
CB
CB
CB
CB
BE
BE
BE
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1A, I
= 300mA, V
= 25V, I
= 30V, I
= 40V, I
= 40V, I
= 75V, I
= 2V, I
= 74V, I
= 75V, I
Test Conditions
B
= 0, Note 1
E
C
C
C
C
E
E
E
= 0
= 0
= 0
= 0, T
= 0
= 0
= 0
= 0, T
BE
= 0, Note 1
C
C
= +71 C
= +71 C
Min
60
75
–
–
–
–
–
–
–
–
Typ
0.8
0.9
4.0
0.2
0.2
0.2
2.7
–65 to +110 C
–
–
–
Max
1.0
0.2
4.0
4.0
4.0
4.0
15
15
–
–
0.5W/ C
0.5 C/W
170W
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
60V
75V
75V
40V
30A
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NTE213 Summary of contents
Page 1
... High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment. Absolute Maximum Ratings: Collector–Emitter Voltage, V Collector–Emitter Voltage, V Collector–Base Voltage Emitter–Base Voltage, V ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Common–Emitter Cutoff Frequency .710 (18.03) Max = +25 C unless otherwise specified) C Symbol Test Conditions 2V ...