NTE2301 NTE ELECTRONICS, NTE2301 Datasheet
NTE2301
Manufacturer Part Number
NTE2301
Description
TRANSISTOR,BJT,NPN,750V V(BR)CEO,5A I(C),TO-218
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2301.pdf
(2 pages)
Description:
The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large
screen deflection circuits.
Features:
D Collector–Emitter Voltage: V
D Glassivated Base–Collector Junction
D Safe Operating Area @ 50 s = 20A, 400V
D Switching Times with Inductive Loads: t
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Continuous Base Current, I
Continuous Emitter Current, I
Total Power Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (During Soldering, 1/8” from Case for 5sec), T
Derate Above 25 C
T
T
C
C
= +25 C
= +100 C
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
High Voltage Horizontal Output
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
CEO
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1500V
J
thJC
NTE2301
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0.4 s (Typ) @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 4.5A
L
. . . . . . . . . . .
–65 to +150 C
–65 to +150 C
1.25 C/W
0.8W/ C
+275 C
1500V
100W
750V
40W
5V
5A
4A
9A
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NTE2301 Summary of contents
Page 1
... High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage Glassivated Base–Collector Junction D Safe Operating Area @ 20A, 400V D Switching Times with Inductive Loads: t Absolute Maximum Ratings: Collector– ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics (Note 1) Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Current Gain – Bandwidth Product Output Capacitance Switching Characteristics Fall Time ...