NTE2330 NTE ELECTRONICS, NTE2330 Datasheet
NTE2330
Manufacturer Part Number
NTE2330
Description
TRANSISTOR,BJT,NPN,55V V(BR)CEO,4A I(C),TO-218VAR
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE2330.pdf
(2 pages)
Features:
D Excellent Wide Safe Operating Area
D Included Avalanche Diode
D High DC Current Gain
D High Collector Power Dissipation Capability
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Allowable Energy
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
EBO
High Gain Amp
= +25 C), P
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
Silicon NPN Transistor
V
V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
= +25 C unless otherwise specified)
(BR)CBO
(BR)CBO
I
CE(sat)
V
h
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
C
FE
BE
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2330
I
I
V
V
I
I
V
C
C
C
C
w
EB
CE
CE
= 10mA, I
= 100mA, I
= 500mA, I
= 1A, I
/Internal Zener Diode
= 5V, I
= 5V, I
= 5V, I
Test Conditions
B
C
C
= 20mA
C
E
= 0
= 500mA
= 500mA
B
B
= 0
= 0
= 2mA
0.50
Min
500
45
45
80
–
–
–
1000 2500
0.65
Typ
55
55
–
–
–
–
55 (+15, –10) V
55 (+15, –10) V
–55 to +150 C
Max
0.80
2.0
3.0
70
70
10
–
+150 C
W.sec
Unit
80W
V
V
V
V
V
20A
A
5V
4A
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NTE2330 Summary of contents
Page 1
... Electrical Characteristics: (T Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter Cutoff Current DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Voltage Allowable Energy NTE2330 Silicon NPN Transistor w /Internal Zener Diode = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
C .591 (15.02) .787 (20. .126 (3.22) Dia E .215 (5.47) ...