NTE235 NTE ELECTRONICS, NTE235 Datasheet
NTE235
Manufacturer Part Number
NTE235
Description
TRANSISTOR,BJT,NPN,65V V(BR)CEO,3A I(C),TO-220
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE235.pdf
(2 pages)
Specifications of NTE235
Rohs Compliant
YES
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Description:
The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output
amplifier stages such as citizen band communications equipment.
Absolute Maximum Ratings: (T
Collector–Emitter Voltage (R
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current Gain–Bandwidth Product
Output Capacitance
Power Output
Collector Efficiency
Continuous
Peak
T
T
A
C
= +50 C
= +25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
EBO
CBO
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
= 150 ), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
Final RF Power Output
=+25 C unless otherwise specified)
A
J
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
V
V
(BR)CBO
(BR)CER
(BR)EBO
I
I
CE(sat)
BE(sat)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
h
CBO
EBO
P
f
FE
T
ob
O
CER
NTE235
I
I
I
V
V
V
I
I
V
V
V
f = 27MHz
C
C
E
C
C
CB
EB
CE
CE
CB
CC
= 100 A, I
= 100 A, I
= 1mA, R
= 1A, I
= 1A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 4V, I
= 40V, I
= 5V, I
= 10V, I
= 10V, f = 1MHz
= 12V, P
Test Conditions
B
B
C
C
= 100mA
= 100mA
BE
E
C
= 0
C
= 500mA
B
in
= 0
= 100mA
= 0
= 0
= 150
= 0.2W,
Min Typ Max Unit
100
4.0
80
75
25
60
5
–
–
–
–
–
0.15
150
0.9
45
–
–
–
–
–
–
–
–
–55 to +150 C
200
0.6
1.2
10
10
60
–
–
–
–
–
–
+150 C
MHz
1.2W
pF
10W
W
%
V
V
V
V
V
75V
80V
A
A
5V
3A
5A
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NTE235 Summary of contents
Page 1
... Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: (T Collector–Emitter Voltage (R Collector–Base Voltage, V CBO Emitter–Base Voltage, V EBO Collector Current Continuous ...
Page 2
Dia Max .070 (1.78) Max Base .100 (2.54) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Emitter Collector/Tab ...