NTE256 NTE ELECTRONICS, NTE256 Datasheet
NTE256
Manufacturer Part Number
NTE256
Description
TRANSISTOR,BJT,DARLINGTON,NPN,400V V(BR)CEO,20A I(C),TO-218
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE256.pdf
(2 pages)
Description:
The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an
integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output
stage in high power, fast switching applications.
Absolute Maximum Ratings:
Collector–Base Voltagte (I
Collector–Emitter Voltage (I
Emitter–Base Voltage (I
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulsed: Pulse Width = 300 s, Duty Cycle = 1.5%.
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Continuous
Peak (t
Parameter
p
B
= 10ms)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0), V
E
C
B
= 0), V
= 0), V
Darlington
+25 C), P
stg
C
V
Symbol
V
EBO
CEO(sus)
Silicon NPN Transistor
= +25 C unless otherwise specified)
I
I
CE(sat)
I
CEO
EBO
CEV
CBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
Note 1
V
I
I
I
I
I
C
C
C
C
C
CEO
CE
CE
EB
thJC
= 100mA, Note 1
= 10A, I
= 18A, I
= 22A, I
= 28A, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE256
= 600V, V
= 600V, V
= 2V, I
w
= 400V, I
/Damper Diode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
B
B
B
B
C
= 0.5A
= 1.8A
= 2.2A
= 5.6A
= 0, Note 1
BE
BE
B
= 0
= 1.5V, T
= 1.5V, Note 1
C
= +100 C,
Min
400
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–65 to + 175 C
Max Unit
100
175
2.0
2.5
3.0
5.0
1
2
–
1.0 C/W
+175 C
150W
600V
400V
mA
mA
mA
V
V
V
V
V
10V
28A
35A
A
6A
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NTE256 Summary of contents
Page 1
... Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications. Absolute Maximum Ratings: Collector–Base Voltagte (I E Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Saturation Voltage DC Current Gain Diode Forward Voltage Resistive Switching Times Turn–On Time Storage Time Fall Time Inductive Switching Times Storage Time Fall Time Storage Time Fall Time Note 1. Pulsed: Pulse Width = ...