NTE274 NTE ELECTRONICS, NTE274 Datasheet
NTE274
Manufacturer Part Number
NTE274
Description
TRANSISTOR,BJT,DARLINGTON,NPN,80V V(BR)CEO,4A I(C),TO-66
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE274.pdf
(2 pages)
Specifications of NTE274
Rohs Compliant
YES
Description:
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66
type case designed for general purpose amplifier, low–frequency switching and hammer driver
applications.
Features:
D High DC Current Gain: h
D Low Collector–Emitter Saturation Voltage: V
D Collector–Emitter Sustaining Voltage: V
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Continuous
Peak
Derate Above 25 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
Darlington Power Amplifier, Switch
EB
CB
C
NTE274 (NPN) & NTE275 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
= 3000 Typ @ I
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
CEO(sus)
I
I
I
CEO
CER
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
I
V
V
V
V
C
J
thJC
CE
CE
CB
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 50mA, I
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 80V, V
= 5V, I
= 40V, I
= 80V, V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE(sat)
= 2A
C
Test Conditions
B
B
EB(off)
= 80V Min
= 0
EB(off)
= 0
= 0
= 2V Max @ I
= 1.5V, T
= 1.5V
A
= +150 C
C
= 2A
Min
80
–
–
–
–
Typ
–65 to +200 C
–65 to +200 C
–
–
–
–
–
0.286W/ C
Max Unit
0.5
0.5
5.0
2.0
–
3.5 C/W
80mA
50W
mA
mA
mA
mA
80V
80V
V
5V
4A
8A
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NTE274 Summary of contents
Page 1
... NTE274 (NPN) & NTE275 (PNP) Silicon Complementary Transistors Darlington Power Amplifier, Switch Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: D High DC Current Gain Low Collector– ...
Page 2
... Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio Output Capacitance NTE274 NTE275 Small–Signal Current Gain NTE274 B NTE275 B = +25 C unless otherwise specified) C Symbol Test Conditions 3V, I ...